Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)
Тип публикации: Journal Article
Дата публикации: 2019-06-18
scimago Q2
wos Q1
white level БС1
SJR: 0.633
CiteScore: 5.6
Impact factor: 3.4
ISSN: 15287483, 15287505
General Chemistry
Condensed Matter Physics
General Materials Science
Краткое описание
III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect on the crystal structure were investigated via analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data. Continuous redshift and a substantial increase in intensity of the photoluminescence emission spectra were observed upon increase of nitrogen content. The effect of antiphase disorder in GaP buffer on the GaPN epilayer properties was studied. It was found that antiphase boundaries, protruding from the GaP/Si to the GaPN/GaP heterointerface, change their orientation and self-annihilate in the dilute nitride layer even with a low (0.5%) nitrogen content.
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Bolshakov A. P. et al. Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001) // Crystal Growth and Design. 2019. Vol. 19. No. 8. pp. 4510-4520.
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Bolshakov A. P., Fedorov V. V., Koval O. Yu., Sapunov G. A., Sobolev M. S., Pirogov E. V., Kirilenko D., Mozharov A. M., Mukhin I. S. Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001) // Crystal Growth and Design. 2019. Vol. 19. No. 8. pp. 4510-4520.
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TY - JOUR
DO - 10.1021/acs.cgd.9b00266
UR - https://doi.org/10.1021/acs.cgd.9b00266
TI - Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)
T2 - Crystal Growth and Design
AU - Bolshakov, Alexey P.
AU - Fedorov, Vladimir V
AU - Koval, Olga Yu
AU - Sapunov, Georgiy A
AU - Sobolev, Maxim S
AU - Pirogov, Evgeniy V
AU - Kirilenko, D.A.
AU - Mozharov, A. M.
AU - Mukhin, Ivan S.
PY - 2019
DA - 2019/06/18
PB - American Chemical Society (ACS)
SP - 4510-4520
IS - 8
VL - 19
SN - 1528-7483
SN - 1528-7505
ER -
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@article{2019_Bolshakov,
author = {Alexey P. Bolshakov and Vladimir V Fedorov and Olga Yu Koval and Georgiy A Sapunov and Maxim S Sobolev and Evgeniy V Pirogov and D.A. Kirilenko and A. M. Mozharov and Ivan S. Mukhin},
title = {Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)},
journal = {Crystal Growth and Design},
year = {2019},
volume = {19},
publisher = {American Chemical Society (ACS)},
month = {jun},
url = {https://doi.org/10.1021/acs.cgd.9b00266},
number = {8},
pages = {4510--4520},
doi = {10.1021/acs.cgd.9b00266}
}
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MLA
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Bolshakov, Alexey P., et al. “Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001).” Crystal Growth and Design, vol. 19, no. 8, Jun. 2019, pp. 4510-4520. https://doi.org/10.1021/acs.cgd.9b00266.
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