Journal of Physical Chemistry C, volume 119, issue 37, pages 21739-21743

Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids

Yating Zhang ^{1, 2}

Mingxuan Cao ^{1, 2}

Xiaoxian Song ^{1, 2}

Yongli Che ^{1, 2}

Haitao Dai ³

Xin Ding ^{1, 2}

Guizhong Zhang ^{1, 2}

Jianquan Yao ^{1, 2}

Hide authors affiliations Show authors affiliations: 3 affiliations

Institute of Laser & Optoelectronics, College of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China |

Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China |

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China |

Publication type: Journal Article

Publication date: 2015-09-08

American Chemical Society (ACS)

Journal: Journal of Physical Chemistry C

SJR: 0.957

CiteScore: 6.5

Impact factor: 3.3

ISSN: 19327447, 19327455

DOI: 10.1021/acs.jpcc.5b07318

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Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Physical and Theoretical Chemistry

General Energy

Abstract

Graphene-semiconductor quantum dot (QD) hybrid field effect phototransistors (FEpTs) have attracted much interest due to their ultrahigh gain and responsivity in photo detection. However, most reported results are based on single-layer heterojunction, and the multiheterojunction FEpTs are often ignored. Here, we design two typical multiheterojunction FEpTs based on graphene–PbSe quantum dot (QD) hybrids, including QD at the bottom layer (QD-bottom) and graphene at the bottom layer (G-bottom) FEpTs. Through a comparative study, G-bottom FEpTs showed a multisaturation behavior due to the multigraphene layer effect, which was absent in the QD-bottom FEpTs. The mobilities for electrons and holes were μE = 147 cm2 V–1 s–1 and μE = 137 cm2 V–1 s–1 in the G-bottom FEpTs and μE = 14 cm2 V–1 s–1 and μE = 59 cm2 V–1 s–1 in the QD-bottom FEpTs. Higher responsivity (∼106 A W–1) and faster response rate were both achieved by the G-bottom FEpTs. All of the advantages in G-bottom FEpTs were attributed to the back-gate e...

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GOST |

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Zhang Y. et al. Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids // Journal of Physical Chemistry C. 2015. Vol. 119. No. 37. pp. 21739-21743.

GOST all authors (up to 50) Copy

Zhang Y., Cao M., Song X., Che Y., Dai H., Ding X., Zhang G., Yao J. Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids // Journal of Physical Chemistry C. 2015. Vol. 119. No. 37. pp. 21739-21743.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1021/acs.jpcc.5b07318

UR - https://doi.org/10.1021/acs.jpcc.5b07318

TI - Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids

T2 - Journal of Physical Chemistry C

AU - Zhang, Yating

AU - Cao, Mingxuan

AU - Song, Xiaoxian

AU - Che, Yongli

AU - Dai, Haitao

AU - Ding, Xin

AU - Zhang, Guizhong

AU - Yao, Jianquan

PY - 2015

DA - 2015/09/08

PB - American Chemical Society (ACS)

SP - 21739-21743

IS - 37

VL - 119

SN - 1932-7447

SN - 1932-7455

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2015_Zhang,

author = {Yating Zhang and Mingxuan Cao and Xiaoxian Song and Yongli Che and Haitao Dai and Xin Ding and Guizhong Zhang and Jianquan Yao},

title = {Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids},

journal = {Journal of Physical Chemistry C},

year = {2015},

volume = {119},

publisher = {American Chemical Society (ACS)},

month = {sep},

url = {https://doi.org/10.1021/acs.jpcc.5b07318},

number = {37},

pages = {21739--21743},

doi = {10.1021/acs.jpcc.5b07318}

}

MLA

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MLA Copy

Zhang, Yating, et al. “Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids.” Journal of Physical Chemistry C, vol. 119, no. 37, Sep. 2015, pp. 21739-21743. https://doi.org/10.1021/acs.jpcc.5b07318.

Found error?

Publisher

American Chemical Society (ACS)

Journal

Journal of Physical Chemistry C

SJR

0.957

CiteScore

6.5

Impact factor

3.3

ISSN

19327447 (Print)

19327455 (Electronic)