Journal of Physical Chemistry C, volume 119, issue 37, pages 21739-21743

Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids

Publication typeJournal Article
Publication date2015-09-08
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor3.7
ISSN19327447, 19327455
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Physical and Theoretical Chemistry
General Energy
Abstract
Graphene-semiconductor quantum dot (QD) hybrid field effect phototransistors (FEpTs) have attracted much interest due to their ultrahigh gain and responsivity in photo detection. However, most reported results are based on single-layer heterojunction, and the multiheterojunction FEpTs are often ignored. Here, we design two typical multiheterojunction FEpTs based on graphene–PbSe quantum dot (QD) hybrids, including QD at the bottom layer (QD-bottom) and graphene at the bottom layer (G-bottom) FEpTs. Through a comparative study, G-bottom FEpTs showed a multisaturation behavior due to the multigraphene layer effect, which was absent in the QD-bottom FEpTs. The mobilities for electrons and holes were μE = 147 cm2 V–1 s–1 and μE = 137 cm2 V–1 s–1 in the G-bottom FEpTs and μE = 14 cm2 V–1 s–1 and μE = 59 cm2 V–1 s–1 in the QD-bottom FEpTs. Higher responsivity (∼106 A W–1) and faster response rate were both achieved by the G-bottom FEpTs. All of the advantages in G-bottom FEpTs were attributed to the back-gate e...

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GOST |
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GOST Copy
Zhang Y. et al. Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids // Journal of Physical Chemistry C. 2015. Vol. 119. No. 37. pp. 21739-21743.
GOST all authors (up to 50) Copy
Zhang Y., Cao M., Song X., Jianlong W., Che Y., Dai H., Ding X., Zhang G., Yao J. Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids // Journal of Physical Chemistry C. 2015. Vol. 119. No. 37. pp. 21739-21743.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acs.jpcc.5b07318
UR - https://doi.org/10.1021/acs.jpcc.5b07318
TI - Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids
T2 - Journal of Physical Chemistry C
AU - Song, Xiaoxian
AU - Dai, Haitao
AU - Zhang, Guizhong
AU - Yao, Jianquan
AU - Zhang, Yating
AU - Cao, Mingxuan
AU - Jianlong, Wang
AU - Che, Yongli
AU - Ding, Xin
PY - 2015
DA - 2015/09/08 00:00:00
PB - American Chemical Society (ACS)
SP - 21739-21743
IS - 37
VL - 119
SN - 1932-7447
SN - 1932-7455
ER -
BibTex |
Cite this
BibTex Copy
@article{2015_Zhang,
author = {Xiaoxian Song and Haitao Dai and Guizhong Zhang and Jianquan Yao and Yating Zhang and Mingxuan Cao and Wang Jianlong and Yongli Che and Xin Ding},
title = {Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids},
journal = {Journal of Physical Chemistry C},
year = {2015},
volume = {119},
publisher = {American Chemical Society (ACS)},
month = {sep},
url = {https://doi.org/10.1021/acs.jpcc.5b07318},
number = {37},
pages = {21739--21743},
doi = {10.1021/acs.jpcc.5b07318}
}
MLA
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MLA Copy
Zhang, Yating, et al. “Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids.” Journal of Physical Chemistry C, vol. 119, no. 37, Sep. 2015, pp. 21739-21743. https://doi.org/10.1021/acs.jpcc.5b07318.
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