Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties
Satyawan Nagane
1
,
DIBYAJYOTI GHOSH
2, 3
,
Robert E. Hoye
4
,
Baodan Zhao
4
,
Shahab Ahmad
5
,
Allison Walker
2
,
Md Saiful Islam
3
,
4
Publication type: Journal Article
Publication date: 2018-02-28
scimago Q1
wos Q3
SJR: 0.914
CiteScore: 6.2
Impact factor: 3.2
ISSN: 19327447, 19327455
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Physical and Theoretical Chemistry
General Energy
Abstract
Solar cells and optoelectronics based on lead halide perovskites are generating considerable interest but face challenges with the use of toxic lead. In this study, we fabricate and characterize lead-free perovskites based on germanium and tin solid solutions, CH3NH3Sn(1–x)GexI3 (0 ≤ x ≤ 1). We show that these perovskite compounds possess band gaps from 1.3 to 2.0 eV, which are suitable for a range of optoelectronic applications, from single junction devices and top cells for tandems to light-emitting layers. Their thermodynamic stability and electronic properties are calculated for all compositions and agree well with our experimental measurements. Our findings demonstrate an attractive family of lead-free perovskite semiconductors with a favorable band-gap range for efficient single-junction solar cells.
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126
Total citations:
126
Citations from 2024:
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(23%)
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GOST
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Nagane S. et al. Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties // Journal of Physical Chemistry C. 2018. Vol. 122. No. 11. pp. 5940-5947.
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Nagane S., GHOSH D., Hoye R. E., Zhao B., Ahmad S., Walker A., Islam M. S., Ogale S., Sadhanala A. Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties // Journal of Physical Chemistry C. 2018. Vol. 122. No. 11. pp. 5940-5947.
Cite this
RIS
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TY - JOUR
DO - 10.1021/acs.jpcc.8b00480
UR - https://doi.org/10.1021/acs.jpcc.8b00480
TI - Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties
T2 - Journal of Physical Chemistry C
AU - Nagane, Satyawan
AU - GHOSH, DIBYAJYOTI
AU - Hoye, Robert E.
AU - Zhao, Baodan
AU - Ahmad, Shahab
AU - Walker, Allison
AU - Islam, Md Saiful
AU - Ogale, Satishchandra
AU - Sadhanala, Aditya
PY - 2018
DA - 2018/02/28
PB - American Chemical Society (ACS)
SP - 5940-5947
IS - 11
VL - 122
SN - 1932-7447
SN - 1932-7455
ER -
Cite this
BibTex (up to 50 authors)
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@article{2018_Nagane,
author = {Satyawan Nagane and DIBYAJYOTI GHOSH and Robert E. Hoye and Baodan Zhao and Shahab Ahmad and Allison Walker and Md Saiful Islam and Satishchandra Ogale and Aditya Sadhanala},
title = {Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties},
journal = {Journal of Physical Chemistry C},
year = {2018},
volume = {122},
publisher = {American Chemical Society (ACS)},
month = {feb},
url = {https://doi.org/10.1021/acs.jpcc.8b00480},
number = {11},
pages = {5940--5947},
doi = {10.1021/acs.jpcc.8b00480}
}
Cite this
MLA
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Nagane, Satyawan, et al. “Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties.” Journal of Physical Chemistry C, vol. 122, no. 11, Feb. 2018, pp. 5940-5947. https://doi.org/10.1021/acs.jpcc.8b00480.