Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties
Тип публикации: Journal Article
Дата публикации: 2018-02-28
scimago Q1
wos Q3
БС1
SJR: 0.914
CiteScore: 6.2
Impact factor: 3.2
ISSN: 19327447, 19327455
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Physical and Theoretical Chemistry
General Energy
Краткое описание
Solar cells and optoelectronics based on lead halide perovskites are generating considerable interest but face challenges with the use of toxic lead. In this study, we fabricate and characterize lead-free perovskites based on germanium and tin solid solutions, CH3NH3Sn(1–x)GexI3 (0 ≤ x ≤ 1). We show that these perovskite compounds possess band gaps from 1.3 to 2.0 eV, which are suitable for a range of optoelectronic applications, from single junction devices and top cells for tandems to light-emitting layers. Their thermodynamic stability and electronic properties are calculated for all compositions and agree well with our experimental measurements. Our findings demonstrate an attractive family of lead-free perovskite semiconductors with a favorable band-gap range for efficient single-junction solar cells.
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Nagane S. et al. Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties // Journal of Physical Chemistry C. 2018. Vol. 122. No. 11. pp. 5940-5947.
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Nagane S., GHOSH D., Hoye R. E., Zhao B., Ahmad S., Walker A., Islam M. S., Ogale S., Sadhanala A. Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties // Journal of Physical Chemistry C. 2018. Vol. 122. No. 11. pp. 5940-5947.
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TY - JOUR
DO - 10.1021/acs.jpcc.8b00480
UR - https://doi.org/10.1021/acs.jpcc.8b00480
TI - Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties
T2 - Journal of Physical Chemistry C
AU - Nagane, Satyawan
AU - GHOSH, DIBYAJYOTI
AU - Hoye, Robert E.
AU - Zhao, Baodan
AU - Ahmad, Shahab
AU - Walker, Allison
AU - Islam, Md Saiful
AU - Ogale, Satishchandra
AU - Sadhanala, Aditya
PY - 2018
DA - 2018/02/28
PB - American Chemical Society (ACS)
SP - 5940-5947
IS - 11
VL - 122
SN - 1932-7447
SN - 1932-7455
ER -
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@article{2018_Nagane,
author = {Satyawan Nagane and DIBYAJYOTI GHOSH and Robert E. Hoye and Baodan Zhao and Shahab Ahmad and Allison Walker and Md Saiful Islam and Satishchandra Ogale and Aditya Sadhanala},
title = {Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties},
journal = {Journal of Physical Chemistry C},
year = {2018},
volume = {122},
publisher = {American Chemical Society (ACS)},
month = {feb},
url = {https://doi.org/10.1021/acs.jpcc.8b00480},
number = {11},
pages = {5940--5947},
doi = {10.1021/acs.jpcc.8b00480}
}
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MLA
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Nagane, Satyawan, et al. “Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties.” Journal of Physical Chemistry C, vol. 122, no. 11, Feb. 2018, pp. 5940-5947. https://doi.org/10.1021/acs.jpcc.8b00480.