том 20 издание 5 страницы 3271-3277

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Тип публикацииJournal Article
Дата публикации2020-04-16
Связанные публикации
SCImago Q1
Tоп 10% SCImago
WOS Q1
БС1
SJR2.594
CiteScore13.5
Impact factor9.1
ISSN15306984, 15306992
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Краткое описание
Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi2Te4, respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi2Te4. Our findings shed new lights on the magnetic property of MnBi2Te4 and thus the design of magnetic topological insulators.
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ГОСТ |
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Yuan Y. et al. Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy // Nano Letters. 2020. Vol. 20. No. 5. pp. 3271-3277.
ГОСТ со всеми авторами (до 50) Скопировать
Yuan Y., Wang X., Li H., Li J., Ji Yu., Hao Z., Wu Y., He K., Wang Y., Xu Y., Duan W., Li W., Xue Q. H. Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy // Nano Letters. 2020. Vol. 20. No. 5. pp. 3271-3277.
RIS |
Цитировать
TY - JOUR
DO - 10.1021/acs.nanolett.0c00031
UR - https://doi.org/10.1021/acs.nanolett.0c00031
TI - Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy
T2 - Nano Letters
AU - Yuan, Yonghao
AU - Wang, Xintong
AU - Li, Hao
AU - Li, Jiaheng
AU - Ji, Yu
AU - Hao, Zhenqi
AU - Wu, Y
AU - He, Ke
AU - Wang, Yayu
AU - Xu, Yong
AU - Duan, Wenhui
AU - Li, Wei
AU - Xue, Q. H.
PY - 2020
DA - 2020/04/16
PB - American Chemical Society (ACS)
SP - 3271-3277
IS - 5
VL - 20
PMID - 32298117
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2020_Yuan,
author = {Yonghao Yuan and Xintong Wang and Hao Li and Jiaheng Li and Yu Ji and Zhenqi Hao and Y Wu and Ke He and Yayu Wang and Yong Xu and Wenhui Duan and Wei Li and Q. H. Xue},
title = {Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy},
journal = {Nano Letters},
year = {2020},
volume = {20},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://doi.org/10.1021/acs.nanolett.0c00031},
number = {5},
pages = {3271--3277},
doi = {10.1021/acs.nanolett.0c00031}
}
MLA
Цитировать
Yuan, Yonghao, et al. “Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy.” Nano Letters, vol. 20, no. 5, Apr. 2020, pp. 3271-3277. https://doi.org/10.1021/acs.nanolett.0c00031.
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