American Chemical Society (ACS)
ACS Applied Electronic Materials
,  volume 2 ,  issue 4 ,  pages 1065-1073

Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures

Publication type: Journal Article
Publication date: 2020-03-29
American Chemical Society (ACS)
scimago Q1
wos Q2
SJR: 1.045
CiteScore: 7.4
Impact factor: 4.7
ISSN: 26376113
Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrochemistry
Abstract
Next-generation nonvolatile memory devices require many functionalities such as high-speed processing, low power consumption, lightweight, and a simple structure. The use of heterostructures with r...
Found 
Found 

Top-30

Journals

1
2
Advanced Functional Materials
Advanced Functional Materials, 2, 22.22%
Advanced Functional Materials
2 publications, 22.22%
Nanotechnology
Nanotechnology, 1, 11.11%
Nanotechnology
1 publication, 11.11%
Chemistry of Materials
Chemistry of Materials, 1, 11.11%
Chemistry of Materials
1 publication, 11.11%
Nanoscale Horizons
Nanoscale Horizons, 1, 11.11%
Nanoscale Horizons
1 publication, 11.11%
National Science Review
National Science Review, 1, 11.11%
National Science Review
1 publication, 11.11%
Ceramics International
Ceramics International, 1, 11.11%
Ceramics International
1 publication, 11.11%
APL Materials
APL Materials, 1, 11.11%
APL Materials
1 publication, 11.11%
Mesoscience and Nanotechnology
Mesoscience and Nanotechnology, 1, 11.11%
Mesoscience and Nanotechnology
1 publication, 11.11%
1
2

Publishers

1
2
Wiley
Wiley, 2, 22.22%
Wiley
2 publications, 22.22%
IOP Publishing
IOP Publishing, 1, 11.11%
IOP Publishing
1 publication, 11.11%
American Chemical Society (ACS)
American Chemical Society (ACS), 1, 11.11%
American Chemical Society (ACS)
1 publication, 11.11%
Royal Society of Chemistry (RSC)
Royal Society of Chemistry (RSC), 1, 11.11%
Royal Society of Chemistry (RSC)
1 publication, 11.11%
Oxford University Press
Oxford University Press, 1, 11.11%
Oxford University Press
1 publication, 11.11%
Elsevier
Elsevier, 1, 11.11%
Elsevier
1 publication, 11.11%
AIP Publishing
AIP Publishing, 1, 11.11%
AIP Publishing
1 publication, 11.11%
Treatise
Treatise, 1, 11.11%
Treatise
1 publication, 11.11%
1
2
  • We do not take into account publications without a DOI.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
9
Share
Cite this
GOST |
Cite this
GOST Copy
Rao B. N. et al. Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures // ACS Applied Electronic Materials. 2020. Vol. 2. No. 4. pp. 1065-1073.
GOST all authors (up to 50) Copy
Rao B. N., Yasui S., Han Y., Hamasaki Y., Katayama T., Shiraishi T., Kiguchi T., Itoh M. Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures // ACS Applied Electronic Materials. 2020. Vol. 2. No. 4. pp. 1065-1073.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsaelm.0c00083
UR - https://doi.org/10.1021/acsaelm.0c00083
TI - Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures
T2 - ACS Applied Electronic Materials
AU - Rao, Badari Narayana
AU - Yasui, Shintaro
AU - Han, Yefei
AU - Hamasaki, Yosuke
AU - Katayama, Tsukasa
AU - Shiraishi, Takahisa
AU - Kiguchi, Takanori
AU - Itoh, Mitsuru
PY - 2020
DA - 2020/03/29
PB - American Chemical Society (ACS)
SP - 1065-1073
IS - 4
VL - 2
SN - 2637-6113
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2020_Rao,
author = {Badari Narayana Rao and Shintaro Yasui and Yefei Han and Yosuke Hamasaki and Tsukasa Katayama and Takahisa Shiraishi and Takanori Kiguchi and Mitsuru Itoh},
title = {Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures},
journal = {ACS Applied Electronic Materials},
year = {2020},
volume = {2},
publisher = {American Chemical Society (ACS)},
month = {mar},
url = {https://doi.org/10.1021/acsaelm.0c00083},
number = {4},
pages = {1065--1073},
doi = {10.1021/acsaelm.0c00083}
}
MLA
Cite this
MLA Copy
Rao, Badari Narayana, et al. “Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures.” ACS Applied Electronic Materials, vol. 2, no. 4, Mar. 2020, pp. 1065-1073. https://doi.org/10.1021/acsaelm.0c00083.