American Chemical Society (ACS)
ACS Applied Electronic Materials
,  том 2 ,  издание 4 ,  страницы 1065-1073

Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures

Тип публикации: Journal Article
Дата публикации: 2020-03-29
American Chemical Society (ACS)
scimago Q1
wos Q2
БС1
SJR: 1.045
CiteScore: 7.4
Impact factor: 4.7
ISSN: 26376113
Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrochemistry
Краткое описание
Next-generation nonvolatile memory devices require many functionalities such as high-speed processing, low power consumption, lightweight, and a simple structure. The use of heterostructures with r...
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ГОСТ |
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Rao B. N. et al. Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures // ACS Applied Electronic Materials. 2020. Vol. 2. No. 4. pp. 1065-1073.
ГОСТ со всеми авторами (до 50) Скопировать
Rao B. N., Yasui S., Han Y., Hamasaki Y., Katayama T., Shiraishi T., Kiguchi T., Itoh M. Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures // ACS Applied Electronic Materials. 2020. Vol. 2. No. 4. pp. 1065-1073.
RIS |
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TY - JOUR
DO - 10.1021/acsaelm.0c00083
UR - https://doi.org/10.1021/acsaelm.0c00083
TI - Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures
T2 - ACS Applied Electronic Materials
AU - Rao, Badari Narayana
AU - Yasui, Shintaro
AU - Han, Yefei
AU - Hamasaki, Yosuke
AU - Katayama, Tsukasa
AU - Shiraishi, Takahisa
AU - Kiguchi, Takanori
AU - Itoh, Mitsuru
PY - 2020
DA - 2020/03/29
PB - American Chemical Society (ACS)
SP - 1065-1073
IS - 4
VL - 2
SN - 2637-6113
ER -
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@article{2020_Rao,
author = {Badari Narayana Rao and Shintaro Yasui and Yefei Han and Yosuke Hamasaki and Tsukasa Katayama and Takahisa Shiraishi and Takanori Kiguchi and Mitsuru Itoh},
title = {Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures},
journal = {ACS Applied Electronic Materials},
year = {2020},
volume = {2},
publisher = {American Chemical Society (ACS)},
month = {mar},
url = {https://doi.org/10.1021/acsaelm.0c00083},
number = {4},
pages = {1065--1073},
doi = {10.1021/acsaelm.0c00083}
}
MLA
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Rao, Badari Narayana, et al. “Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures.” ACS Applied Electronic Materials, vol. 2, no. 4, Mar. 2020, pp. 1065-1073. https://doi.org/10.1021/acsaelm.0c00083.