American Chemical Society (ACS)
ACS Applied Electronic Materials
,  volume 3 ,  issue 2 ,  pages 769-777

Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing

Sergey Kudryashov 1, 2
, 
Alena Nastulyavichus 1
, 
D.A. Kirilenko 2, 3
, 
P.N Brunkov 2, 3
, 
Alexander L Shakhmin 4
, 
Andrey E. Rudenko 1
, 
Nikolay Melnik 1
, 
Roman Khmelnitskii 1
, 
Victor Martovitskii 1
, 
M.V. USPENSKAYA 2
, 
D. D. Prikhodko 5, 6
, 
S. A. Tarelkin 5, 7, 8
, 
Artem Galkin 5
, 
Taisia Drozdova 5
, 
Andrey Ionin 1
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
The All-Russian Research Institute for Optical and Physical Measurements, 119361 Moscow, Russia | 
Publication type: Journal Article
Publication date: 2021-01-18
American Chemical Society (ACS)
scimago Q1
wos Q2
SJR: 1.045
CiteScore: 7.4
Impact factor: 4.7
ISSN: 26376113
Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrochemistry
Abstract
The mid-infrared (IR)-sensitive n/p-junction was fabricated on a p-doped silicon (Si) wafer via ultrashort laser n-type surface hyperdoping and high-temperature annealing. First, the n-type sulfur ...
Found 
Found 

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GOST |
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GOST Copy
Kudryashov S. et al. Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing // ACS Applied Electronic Materials. 2021. Vol. 3. No. 2. pp. 769-777.
GOST all authors (up to 50) Copy
Kudryashov S., Nastulyavichus A., Kirilenko D., Brunkov P., Shakhmin A. L., Rudenko A. E., Melnik N., Khmelnitskii R., Martovitskii V., USPENSKAYA M., Prikhodko D. D., Tarelkin S. A., Galkin A., Drozdova T., Ionin A. Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing // ACS Applied Electronic Materials. 2021. Vol. 3. No. 2. pp. 769-777.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsaelm.0c00914
UR - https://doi.org/10.1021/acsaelm.0c00914
TI - Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing
T2 - ACS Applied Electronic Materials
AU - Kudryashov, Sergey
AU - Nastulyavichus, Alena
AU - Kirilenko, D.A.
AU - Brunkov, P.N
AU - Shakhmin, Alexander L
AU - Rudenko, Andrey E.
AU - Melnik, Nikolay
AU - Khmelnitskii, Roman
AU - Martovitskii, Victor
AU - USPENSKAYA, M.V.
AU - Prikhodko, D. D.
AU - Tarelkin, S. A.
AU - Galkin, Artem
AU - Drozdova, Taisia
AU - Ionin, Andrey
PY - 2021
DA - 2021/01/18
PB - American Chemical Society (ACS)
SP - 769-777
IS - 2
VL - 3
SN - 2637-6113
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2021_Kudryashov,
author = {Sergey Kudryashov and Alena Nastulyavichus and D.A. Kirilenko and P.N Brunkov and Alexander L Shakhmin and Andrey E. Rudenko and Nikolay Melnik and Roman Khmelnitskii and Victor Martovitskii and M.V. USPENSKAYA and D. D. Prikhodko and S. A. Tarelkin and Artem Galkin and Taisia Drozdova and Andrey Ionin},
title = {Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing},
journal = {ACS Applied Electronic Materials},
year = {2021},
volume = {3},
publisher = {American Chemical Society (ACS)},
month = {jan},
url = {https://doi.org/10.1021/acsaelm.0c00914},
number = {2},
pages = {769--777},
doi = {10.1021/acsaelm.0c00914}
}
MLA
Cite this
MLA Copy
Kudryashov, Sergey, et al. “Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing.” ACS Applied Electronic Materials, vol. 3, no. 2, Jan. 2021, pp. 769-777. https://doi.org/10.1021/acsaelm.0c00914.