Unraveling the impact of hole transport materials on photostability of perovskite films and p-i-n solar cells.

We investigated the impact of a series of hole transport layer materials (HTLs) such as PEDOT:PSS, NiOx, PTAA, and PTA on photostability of thin films and solar cells based on MAPbI3, Cs0.15FA0.85PbI3, Cs0.1MA0.15FA0.75PbI3, Cs0.1MA0.15FA0.75Pb(Br0.15I0.85)3, and Cs0.15FA0.85Pb(Br0.15I0.85)3 complex lead halides. Mixed halide perovskites showed reduced photostability in comparison with similar iodide-only compositions. In particular, we observed light-induced recrystallization of all perovskite films except MAPbI3 with the strongest effects revealed for Br-containing systems. Moreover, halide and β FAPbI3 phase segregations were also observed mostly in mixed-halide systems. Interestingly, coating perovskite films with PCBM layer spectacularly suppressed light-induced growth of crystalline domains as well as segregation of Br-rich and I-rich phases or β FAPbI3. We strongly believe that all three effects are promoted by the light-induced formation of surface defects, which are healed by adjacent PCBM coating. While comparing different hole-transport materials, we found that NiOx and PEDOT:PSS are the least suitable HTLs due to their interfacial (photo)chemical interactions with perovskite absorbers. On the contrary, polyarylamine-type HTLs PTA and PTAA form rather stable interfaces, which makes them the best candidates for durable p-i-n perovskite solar cells. Indeed, multilayered ITO/PTA(A)/MAPbI3/PCBM stacks revealed no aging effects within 1000 h of continuous light soaking and delivered stable and high power conversion efficiencies in solar cells. The obtained results suggest that using polyarylamine-type HTLs and simple single-phase perovskite compositions paves a way for designing stable and efficient perovskite solar cells.