том 15 издание 19 страницы 23583-23592

Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications

Тип публикацииJournal Article
Дата публикации2023-04-06
SCImago Q1
Tоп 10% SCImago
WOS Q1
БС1
SJR1.614
CiteScore14.5
Impact factor8.2
ISSN19448244, 19448252
General Materials Science
Краткое описание
Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials have drawn significant attention due to their outstanding sensitivity. However, the Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), and a 2D-material biosensor with sub-60 mV/dec SS has not been realized, which hinders further increase of the sensitivity of 2D-material FET biosensors. Here, we report tunnel FETs (TFETs) based on a SnSe2/WSe2 heterostructure and observe the tunneling effect of a 2D material in aqueous solution for the first time with an ultralow SS of 29 mV/dec. A bilayer dielectric (Al2O3/HfO2) and graphene contacts, which significantly reduce the leakage current in solution and contact resistance, respectively, are crucial to the realization of the tunneling effect in solution. Then, we propose a novel biosensing method by using tunneling current as the sensing signal. The TFETs show an extremely high pH sensitivity of 895/pH due to ultralow SS, surpassing the sensitivity of FET biosensors based on a single 2D material (WSe2) by 8-fold. Specific detection of glucose is realized, and the biosensors show a superb sensitivity (3158 A/A for 5 mM), wide sensing range (from 10-9 to 10-3 M), low detection limit (10-9 M), and rapid response rate (11 s). The sensors also exhibit the ability of monitoring glucose in complex biofluid (sweat). This work provides a platform for ultrasensitive biosensing. The discovery of the tunneling effect of 2D materials in aqueous solution may stimulate further fundamental research and potential applications.
Для доступа к списку цитирований публикации необходимо авторизоваться.

Топ-30

Журналы

1
2
3
ACS applied materials & interfaces
3 публикации, 17.65%
ACS Nano
1 публикация, 5.88%
Journal of Industrial and Engineering Chemistry
1 публикация, 5.88%
IEEE Nanotechnology Magazine
1 публикация, 5.88%
Microchemical Journal
1 публикация, 5.88%
Small
1 публикация, 5.88%
Physical Review Applied
1 публикация, 5.88%
Applied Physics Letters
1 публикация, 5.88%
Surface Review and Letters
1 публикация, 5.88%
Russian Chemical Reviews
1 публикация, 5.88%
Materials Today Chemistry
1 публикация, 5.88%
Micro and Nanostructures
1 публикация, 5.88%
Advanced Electronic Materials
1 публикация, 5.88%
Materials Today Physics
1 публикация, 5.88%
1
2
3

Издатели

1
2
3
4
American Chemical Society (ACS)
4 публикации, 23.53%
Elsevier
4 публикации, 23.53%
Institute of Electrical and Electronics Engineers (IEEE)
2 публикации, 11.76%
Wiley
2 публикации, 11.76%
Korean Society of Industrial Engineering Chemistry
1 публикация, 5.88%
American Physical Society (APS)
1 публикация, 5.88%
AIP Publishing
1 публикация, 5.88%
World Scientific
1 публикация, 5.88%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 публикация, 5.88%
1
2
3
4
  • Мы не учитываем публикации, у которых нет DOI.
  • Статистика публикаций обновляется еженедельно.

Вы ученый?

Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.
 Войти с ORCID
Метрики
17
Поделиться
Цитировать
ГОСТ |
Цитировать
Wu X. et al. Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications // ACS applied materials & interfaces. 2023. Vol. 15. No. 19. pp. 23583-23592.
ГОСТ со всеми авторами (до 50) Скопировать
Wu X., Zhao H., Zhou E., Zou Y., Xiao S., Ma S., You R., Li P. Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications // ACS applied materials & interfaces. 2023. Vol. 15. No. 19. pp. 23583-23592.
RIS |
Цитировать
TY - JOUR
DO - 10.1021/acsami.3c00257
UR - https://pubs.acs.org/doi/10.1021/acsami.3c00257
TI - Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications
T2 - ACS applied materials & interfaces
AU - Wu, Xian
AU - Zhao, Haojie
AU - Zhou, Enze
AU - Zou, Yixuan
AU - Xiao, Shanpeng
AU - Ma, Shuai
AU - You, Rui
AU - Li, Peng
PY - 2023
DA - 2023/04/06
PB - American Chemical Society (ACS)
SP - 23583-23592
IS - 19
VL - 15
PMID - 37020349
SN - 1944-8244
SN - 1944-8252
ER -
BibTex |
Цитировать
BibTex (до 50 авторов) Скопировать
@article{2023_Wu,
author = {Xian Wu and Haojie Zhao and Enze Zhou and Yixuan Zou and Shanpeng Xiao and Shuai Ma and Rui You and Peng Li},
title = {Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications},
journal = {ACS applied materials & interfaces},
year = {2023},
volume = {15},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://pubs.acs.org/doi/10.1021/acsami.3c00257},
number = {19},
pages = {23583--23592},
doi = {10.1021/acsami.3c00257}
}
MLA
Цитировать
Wu, Xian, et al. “Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications.” ACS applied materials & interfaces, vol. 15, no. 19, Apr. 2023, pp. 23583-23592. https://pubs.acs.org/doi/10.1021/acsami.3c00257.
Ошибка в публикации?