volume 8 issue 42 pages 28880-28887

Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications.

Publication typeJournal Article
Publication date2016-10-12
scimago Q1
wos Q1
SJR1.921
CiteScore14.5
Impact factor8.2
ISSN19448244, 19448252
General Materials Science
Abstract
This article presents a new simple method of creating light-absorbing carbon material for optical devices such as bolometers. A simple method of laser microstructuring of graphene oxide is used in order to create such material. The absorption values of more than 98% in the visible and more than 90% in the infrared range are achieved. Moreover thermal properties of the films, such as temperature dependence and the thermal response of the samples, are studied. The change in resistance with temperature is 13 Ohm K-1, temperature coefficient of resistance (TCR) is 0.3% K-1, and the sensitivity is 0.17 V W-1 at 300 K. Thermal conductivity is rather high at ∼104 W m-1 K-1 at 300 K. The designed bolometer operates at room temperature using incandescent lamp as a light source. This technique suggests a new inexpensive way to create a selective absorption coating and/or active layer for optical devices. Developed GO and rGO films have a large surface area and high conductivity. These properties make carbon coatings a perfect candidate for creating a new type of optoelectronic devices (gas sensors, detectors of biological objects, etc.).
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GOST Copy
Evlashin S. et al. Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications. // ACS applied materials & interfaces. 2016. Vol. 8. No. 42. pp. 28880-28887.
GOST all authors (up to 50) Copy
Evlashin S., Khmelnitsky R., Klokov A., Sharkov A., Timashev P. S., Minaeva S., Suetin N. Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications. // ACS applied materials & interfaces. 2016. Vol. 8. No. 42. pp. 28880-28887.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsami.6b10145
UR - https://doi.org/10.1021/acsami.6b10145
TI - Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications.
T2 - ACS applied materials & interfaces
AU - Evlashin, Stanislav
AU - Khmelnitsky, Roman
AU - Klokov, Andrey
AU - Sharkov, Andrey
AU - Timashev, Petr S.
AU - Minaeva, Svetlana
AU - Suetin, Nikolay
PY - 2016
DA - 2016/10/12
PB - American Chemical Society (ACS)
SP - 28880-28887
IS - 42
VL - 8
PMID - 27704776
SN - 1944-8244
SN - 1944-8252
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2016_Evlashin,
author = {Stanislav Evlashin and Roman Khmelnitsky and Andrey Klokov and Andrey Sharkov and Petr S. Timashev and Svetlana Minaeva and Nikolay Suetin},
title = {Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications.},
journal = {ACS applied materials & interfaces},
year = {2016},
volume = {8},
publisher = {American Chemical Society (ACS)},
month = {oct},
url = {https://doi.org/10.1021/acsami.6b10145},
number = {42},
pages = {28880--28887},
doi = {10.1021/acsami.6b10145}
}
MLA
Cite this
MLA Copy
Evlashin, Stanislav, et al. “Controllable Laser Reduction of Graphene Oxide Films for Photoelectronic Applications..” ACS applied materials & interfaces, vol. 8, no. 42, Oct. 2016, pp. 28880-28887. https://doi.org/10.1021/acsami.6b10145.