ACS applied materials & interfaces, volume 10, issue 17, pages 14843-14849
Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites
Publication type: Journal Article
Publication date: 2018-04-10
Journal:
ACS applied materials & interfaces
Q1
Q1
SJR: 2.058
CiteScore: 16.0
Impact factor: 8.3
ISSN: 19448244, 19448252
General Materials Science
Abstract
The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 102 and 8.5 × 103, respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 104 s, and the number of endurance cycles was above 1 × 102. The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.
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Kim D. H. et al. Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites // ACS applied materials & interfaces. 2018. Vol. 10. No. 17. pp. 14843-14849.
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Kim D. H., Wu C., Park D., Kim W. K., Seo H. W., Kim S. W., Kim T. W. Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites // ACS applied materials & interfaces. 2018. Vol. 10. No. 17. pp. 14843-14849.
Cite this
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TY - JOUR
DO - 10.1021/acsami.7b18817
UR - https://doi.org/10.1021/acsami.7b18817
TI - Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites
T2 - ACS applied materials & interfaces
AU - Kim, Do Hyeong
AU - Wu, Chaoxing
AU - Park, Dong-Hyun
AU - Kim, Woo Kyum
AU - Seo, Hae Woon
AU - Kim, Sang Wook
AU - Kim, Tae Whan
PY - 2018
DA - 2018/04/10
PB - American Chemical Society (ACS)
SP - 14843-14849
IS - 17
VL - 10
SN - 1944-8244
SN - 1944-8252
ER -
Cite this
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@article{2018_Kim,
author = {Do Hyeong Kim and Chaoxing Wu and Dong-Hyun Park and Woo Kyum Kim and Hae Woon Seo and Sang Wook Kim and Tae Whan Kim},
title = {Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites},
journal = {ACS applied materials & interfaces},
year = {2018},
volume = {10},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://doi.org/10.1021/acsami.7b18817},
number = {17},
pages = {14843--14849},
doi = {10.1021/acsami.7b18817}
}
Cite this
MLA
Copy
Kim, Do Hyeong, et al. “Flexible Memristive Devices Based on InP/ZnSe/ZnS Core–Multishell Quantum Dot Nanocomposites.” ACS applied materials & interfaces, vol. 10, no. 17, Apr. 2018, pp. 14843-14849. https://doi.org/10.1021/acsami.7b18817.