ACS applied materials & interfaces, volume 10, issue 18, pages 16033-16040

Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity

Publication typeJournal Article
Publication date2018-04-13
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor9.5
ISSN19448244, 19448252
General Materials Science
Abstract
Recently, black phosphorus (BP) with direct band gap exhibited excellent potential for optoelectronic applications because of its high charge carrier mobility and low dark current as well as the variable band gap of 0.3-1.5 eV depending on the number of layers. However, few-layer BP-based phototransistors (photo-FETs) have been limited in sensitivity and wavelength selectivity. To overcome the drawback of these photo-FETs, we studied hybrid photo-FETs combined with the novel properties of the two materials between the channel and sensitizer layers. By combining a strong absorbance of a quantum dot (QD) layer and a two-dimensional layer material with high carrier mobility, the hybrid photo-FETs are expected to produce high-performance photodetectors that can effectively control the responsivity, detectivity, and response time. In this study, we demonstrate that the photogenerated carriers formed from QD sensitizer layers migrate to the BP transport layer with high charge mobility and not only improve the photodetector performance but also enhance the photodoping effect of the BP transport layer with an ambipolar characteristic by electrons transferred from n-type CdSe QDs or holes injected from p-type PbS QDs. The responsivity and detectivity of hybrid BP/0D photo-FETs exhibit 1.16 × 109 A W-1 and 7.53 × 1016 Jones for the BP/CdSe QD photo-FET and 5.36 × 108 A W-1 and 1.89 × 1016 Jones for the BP/PbS QD photo-FET, respectively. The photocurrent rise (τrise) and decay (τdecay) times were τrise = 0.406 s and τdecay = 0.815 s for BP/CdSe QD photo-FET and τrise = 0.576 s and τdecay = 0.773 s for BP/PbS QD photo-FET, respectively.

Top-30

Citations by journals

1
2
3
4
ACS applied materials & interfaces
4 publications, 13.33%
Applied Physics Letters
2 publications, 6.67%
Micromachines
2 publications, 6.67%
Journal of Communications Technology and Electronics
2 publications, 6.67%
Physical Review B
1 publication, 3.33%
Materials
1 publication, 3.33%
Nanomaterials
1 publication, 3.33%
npj 2D Materials and Applications
1 publication, 3.33%
Advanced Energy Materials
1 publication, 3.33%
Applied Surface Science
1 publication, 3.33%
Journal of Alloys and Compounds
1 publication, 3.33%
Journal of Molecular Liquids
1 publication, 3.33%
Advanced Functional Materials
1 publication, 3.33%
Advanced Science
1 publication, 3.33%
Advanced Materials
1 publication, 3.33%
ACS Photonics
1 publication, 3.33%
Journal of Physical Chemistry C
1 publication, 3.33%
Physical Review Applied
1 publication, 3.33%
Journal of Materials Chemistry C
1 publication, 3.33%
Small Methods
1 publication, 3.33%
Current Applied Physics
1 publication, 3.33%
2D Materials
1 publication, 3.33%
Electron
1 publication, 3.33%
Russian Chemical Reviews
1 publication, 3.33%
1
2
3
4

Citations by publishers

1
2
3
4
5
6
Wiley
6 publications, 20%
American Chemical Society (ACS)
6 publications, 20%
Multidisciplinary Digital Publishing Institute (MDPI)
4 publications, 13.33%
Elsevier
4 publications, 13.33%
American Institute of Physics (AIP)
2 publications, 6.67%
American Physical Society (APS)
2 publications, 6.67%
Pleiades Publishing
2 publications, 6.67%
Springer Nature
1 publication, 3.33%
Royal Society of Chemistry (RSC)
1 publication, 3.33%
IOP Publishing
1 publication, 3.33%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 3.33%
1
2
3
4
5
6
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
Share
Cite this
GOST |
Cite this
GOST Copy
Lee A. et al. Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity // ACS applied materials & interfaces. 2018. Vol. 10. No. 18. pp. 16033-16040.
GOST all authors (up to 50) Copy
Lee A., Ra H. S., Kwak D. H., Jeong M. H., PARK J. H., Kang Y. S., Chae W., Lee J. Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity // ACS applied materials & interfaces. 2018. Vol. 10. No. 18. pp. 16033-16040.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsami.8b03285
UR - https://doi.org/10.1021/acsami.8b03285
TI - Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity
T2 - ACS applied materials & interfaces
AU - Lee, A-Young
AU - Ra, Hyun Soo
AU - Kwak, Do Hyun
AU - Jeong, Min Hye
AU - PARK, JEONG HYUN
AU - Kang, Yeon Su
AU - Chae, Weon-Sik
AU - Lee, Joohyoung
PY - 2018
DA - 2018/04/13 00:00:00
PB - American Chemical Society (ACS)
SP - 16033-16040
IS - 18
VL - 10
SN - 1944-8244
SN - 1944-8252
ER -
BibTex |
Cite this
BibTex Copy
@article{2018_Lee,
author = {A-Young Lee and Hyun Soo Ra and Do Hyun Kwak and Min Hye Jeong and JEONG HYUN PARK and Yeon Su Kang and Weon-Sik Chae and Joohyoung Lee},
title = {Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity},
journal = {ACS applied materials & interfaces},
year = {2018},
volume = {10},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://doi.org/10.1021/acsami.8b03285},
number = {18},
pages = {16033--16040},
doi = {10.1021/acsami.8b03285}
}
MLA
Cite this
MLA Copy
Lee, A-Young, et al. “Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity.” ACS applied materials & interfaces, vol. 10, no. 18, Apr. 2018, pp. 16033-16040. https://doi.org/10.1021/acsami.8b03285.
Found error?