Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications
Stepan V. Bolshedvorskii
1, 2, 3
,
Anton I. Zeleneev
2, 4
,
Vadim V Vorobyov
1, 5
,
Vladimir V Soshenko
1, 3
,
Olga R Rubinas
1, 2, 3
,
Leonid A Zhulikov
2, 4
,
Pavel A Pivovarov
6
,
Vadim N. Sorokin
1, 4
,
Andrey N. Smolyaninov
3
,
Liudmila F Kulikova
7
,
S.G. Lyapin
7
,
Viatcheslav N Agafonov
8
,
Rustem E Uzbekov
9
,
Valery A. Davydov
7
,
Alexey Akimov
1, 4, 10
2
3
Photonic Nano-Meta Technologies, The Territory of Skolkovo Innovation Center, Str. Nobel b.7, 143026 Moscow, Russia
|
10
Texas A & M University, College Station, Texas 77843, United States
|
Publication type: Journal Article
Publication date: 2019-07-08
scimago Q1
wos Q2
SJR: 1.121
CiteScore: 8.1
Impact factor: 5.5
ISSN: 25740970
General Materials Science
Abstract
Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications....
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Metrics
31
Total citations:
31
Citations from 2024:
8
(25%)
Cite this
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RIS |
BibTex |
MLA
Cite this
GOST
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Bolshedvorskii S. V. et al. Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications // ACS Applied Nano Materials. 2019. Vol. 2. No. 8. pp. 4765-4772.
GOST all authors (up to 50)
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Bolshedvorskii S. V., Zeleneev A. I., Vorobyov V. V., Soshenko V. V., Rubinas O. R., Zhulikov L. A., Pivovarov P. A., Sorokin V. N., Smolyaninov A. N., Kulikova L. F., Garanina A. S., Lyapin S., Agafonov V. N., Uzbekov R. E., Davydov V. A., Akimov A. Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications // ACS Applied Nano Materials. 2019. Vol. 2. No. 8. pp. 4765-4772.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1021/acsanm.9b00580
UR - https://doi.org/10.1021/acsanm.9b00580
TI - Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications
T2 - ACS Applied Nano Materials
AU - Bolshedvorskii, Stepan V.
AU - Zeleneev, Anton I.
AU - Vorobyov, Vadim V
AU - Soshenko, Vladimir V
AU - Rubinas, Olga R
AU - Zhulikov, Leonid A
AU - Pivovarov, Pavel A
AU - Sorokin, Vadim N.
AU - Smolyaninov, Andrey N.
AU - Kulikova, Liudmila F
AU - Garanina, Anastasiia S
AU - Lyapin, S.G.
AU - Agafonov, Viatcheslav N
AU - Uzbekov, Rustem E
AU - Davydov, Valery A.
AU - Akimov, Alexey
PY - 2019
DA - 2019/07/08
PB - American Chemical Society (ACS)
SP - 4765-4772
IS - 8
VL - 2
SN - 2574-0970
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2019_Bolshedvorskii,
author = {Stepan V. Bolshedvorskii and Anton I. Zeleneev and Vadim V Vorobyov and Vladimir V Soshenko and Olga R Rubinas and Leonid A Zhulikov and Pavel A Pivovarov and Vadim N. Sorokin and Andrey N. Smolyaninov and Liudmila F Kulikova and Anastasiia S Garanina and S.G. Lyapin and Viatcheslav N Agafonov and Rustem E Uzbekov and Valery A. Davydov and Alexey Akimov},
title = {Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications},
journal = {ACS Applied Nano Materials},
year = {2019},
volume = {2},
publisher = {American Chemical Society (ACS)},
month = {jul},
url = {https://doi.org/10.1021/acsanm.9b00580},
number = {8},
pages = {4765--4772},
doi = {10.1021/acsanm.9b00580}
}
Cite this
MLA
Copy
Bolshedvorskii, Stepan V., et al. “Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications.” ACS Applied Nano Materials, vol. 2, no. 8, Jul. 2019, pp. 4765-4772. https://doi.org/10.1021/acsanm.9b00580.