ACS Applied Nano Materials

, том 2 , издание 8 , страницы 4765-4772

Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

Тип публикации: Journal Article

Дата публикации: 2019-07-08

American Chemical Society (ACS)

ACS Applied Nano Materials

scimago Q1

wos Q2

БС1

SJR: 1.121

CiteScore: 8.1

Impact factor: 5.5

ISSN: 25740970

DOI: 10.1021/acsanm.9b00580

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General Materials Science

Краткое описание

Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications....

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Болдырев Кирилл

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к.ф.-м.н., доц.

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Московский физико-технический институт

Национальный исследовательский университет «Высшая школа экономики»

Институт спектроскопии РАН

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Седов Вадим

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Институт общей физики имени А.М. Прохорова РАН

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Chemical Vapor Deposition

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Наумов Андрей

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д.ф.-м.н., доц., ч.-к., Российская академия наук

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Физический институт им. П.Н. Лебедева РАН

Институт спектроскопии РАН

Московский педагогический государственный университет

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Fluorescence nanoscopy

Single-molecule spectroscopy

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Diamond and Related Materials	Diamond and Related Materials, 3, 9.68% Diamond and Related Materials 3 публикации, 9.68%
Functional Diamond	Functional Diamond, 2, 6.45% Functional Diamond 2 публикации, 6.45%
ACS Applied Nano Materials	ACS Applied Nano Materials, 2, 6.45% ACS Applied Nano Materials 2 публикации, 6.45%
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Bolshedvorskii S. V. et al. Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications // ACS Applied Nano Materials. 2019. Vol. 2. No. 8. pp. 4765-4772.

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Bolshedvorskii S. V., Zeleneev A. I., Vorobyov V. V., Soshenko V. V., Rubinas O. R., Zhulikov L. A., Pivovarov P. A., Sorokin V. N., Smolyaninov A. N., Kulikova L. F., Garanina A. S., Lyapin S., Agafonov V. N., Uzbekov R. E., Davydov V. A., Akimov A. Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications // ACS Applied Nano Materials. 2019. Vol. 2. No. 8. pp. 4765-4772.

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TY - JOUR

DO - 10.1021/acsanm.9b00580

UR - https://doi.org/10.1021/acsanm.9b00580

TI - Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

T2 - ACS Applied Nano Materials

AU - Bolshedvorskii, Stepan V.

AU - Zeleneev, Anton I.

AU - Vorobyov, Vadim V

AU - Soshenko, Vladimir V

AU - Rubinas, Olga R

AU - Zhulikov, Leonid A

AU - Pivovarov, Pavel A

AU - Sorokin, Vadim N.

AU - Smolyaninov, Andrey N.

AU - Kulikova, Liudmila F

AU - Garanina, Anastasiia S

AU - Lyapin, S.G.

AU - Agafonov, Viatcheslav N

AU - Uzbekov, Rustem E

AU - Davydov, Valery A.

AU - Akimov, Alexey

PY - 2019

DA - 2019/07/08

PB - American Chemical Society (ACS)

SP - 4765-4772

IS - 8

VL - 2

SN - 2574-0970

ER -

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@article{2019_Bolshedvorskii,

author = {Stepan V. Bolshedvorskii and Anton I. Zeleneev and Vadim V Vorobyov and Vladimir V Soshenko and Olga R Rubinas and Leonid A Zhulikov and Pavel A Pivovarov and Vadim N. Sorokin and Andrey N. Smolyaninov and Liudmila F Kulikova and Anastasiia S Garanina and S.G. Lyapin and Viatcheslav N Agafonov and Rustem E Uzbekov and Valery A. Davydov and Alexey Akimov},

title = {Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications},

journal = {ACS Applied Nano Materials},

year = {2019},

volume = {2},

publisher = {American Chemical Society (ACS)},

month = {jul},

url = {https://doi.org/10.1021/acsanm.9b00580},

number = {8},

pages = {4765--4772},

doi = {10.1021/acsanm.9b00580}

}

MLA

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Bolshedvorskii, Stepan V., et al. “Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications.” ACS Applied Nano Materials, vol. 2, no. 8, Jul. 2019, pp. 4765-4772. https://doi.org/10.1021/acsanm.9b00580.

Издатель

American Chemical Society (ACS)

Журнал

ACS Applied Nano Materials

scimago Q1

wos Q2

БС1

SJR

1.121

CiteScore

8.1

Impact factor

5.5

ISSN

25740970 (Print, Electronic)