том 2 издание 5 страницы 3262-3270

Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices

Тип публикацииJournal Article
Дата публикации2019-04-26
scimago Q1
wos Q2
БС1
SJR1.121
CiteScore8.1
Impact factor5.5
ISSN25740970
General Materials Science
Краткое описание
The 40 kV high-resolution transmission electron microscopy (TEM) experiments are performed to understand defect formation and evolution of their atomic structure in single-layer 2H MoTe2 under elec...
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Journal of Physical Chemistry C
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ГОСТ |
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Lehnert T. et al. Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices // ACS Applied Nano Materials. 2019. Vol. 2. No. 5. pp. 3262-3270.
ГОСТ со всеми авторами (до 50) Скопировать
Lehnert T., Ghorbani-Asl M., Köster J., Lee Z., Krasheninnikov A. V., Kaiser U. Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices // ACS Applied Nano Materials. 2019. Vol. 2. No. 5. pp. 3262-3270.
RIS |
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TY - JOUR
DO - 10.1021/acsanm.9b00616
UR - https://doi.org/10.1021/acsanm.9b00616
TI - Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices
T2 - ACS Applied Nano Materials
AU - Lehnert, Tibor
AU - Ghorbani-Asl, Mahdi
AU - Köster, Janis
AU - Lee, Zhongbo
AU - Krasheninnikov, Arkady V.
AU - Kaiser, Ute
PY - 2019
DA - 2019/04/26
PB - American Chemical Society (ACS)
SP - 3262-3270
IS - 5
VL - 2
SN - 2574-0970
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2019_Lehnert,
author = {Tibor Lehnert and Mahdi Ghorbani-Asl and Janis Köster and Zhongbo Lee and Arkady V. Krasheninnikov and Ute Kaiser},
title = {Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices},
journal = {ACS Applied Nano Materials},
year = {2019},
volume = {2},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://doi.org/10.1021/acsanm.9b00616},
number = {5},
pages = {3262--3270},
doi = {10.1021/acsanm.9b00616}
}
MLA
Цитировать
Lehnert, Tibor, et al. “Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices.” ACS Applied Nano Materials, vol. 2, no. 5, Apr. 2019, pp. 3262-3270. https://doi.org/10.1021/acsanm.9b00616.