ACS Nano, volume 15, issue 3, pages 5600-5609

One-Dimensional van der Waals Heterojunction Diode.

Feng Ya 1
Li Henan 1
Inoue T. 1, 2
Rotkin S. V. 3
Xiang Rong 1
1
 
Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2
 
Department of Applied Physics, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
Publication typeJournal Article
Publication date2021-03-01
Journal: ACS Nano
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor17.1
ISSN19360851, 1936086X
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which offers alternative possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable different properties and further miniaturization beyond the capabilities of their two-dimensional counterparts. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes and n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube, 11 nm wide, with the coaxial assembly of a semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube, which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on a semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.

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GOST Copy
Feng Ya. et al. One-Dimensional van der Waals Heterojunction Diode. // ACS Nano. 2021. Vol. 15. No. 3. pp. 5600-5609.
GOST all authors (up to 50) Copy
Feng Ya., Li H., Inoue T., Chiashi S., Rotkin S. V., Xiang R., Maruyama S. One-Dimensional van der Waals Heterojunction Diode. // ACS Nano. 2021. Vol. 15. No. 3. pp. 5600-5609.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1021/acsnano.1c00657
UR - https://doi.org/10.1021%2Facsnano.1c00657
TI - One-Dimensional van der Waals Heterojunction Diode.
T2 - ACS Nano
AU - Li, Henan
AU - Feng, Ya
AU - Inoue, T.
AU - Chiashi, Shohei
AU - Xiang, Rong
AU - Maruyama, Shigeo
AU - Rotkin, S. V.
PY - 2021
DA - 2021/03/01 00:00:00
PB - American Chemical Society (ACS)
SP - 5600-5609
IS - 3
VL - 15
SN - 1936-0851
SN - 1936-086X
ER -
BibTex |
Cite this
BibTex Copy
@article{2021_Feng,
author = {Henan Li and Ya Feng and T. Inoue and Shohei Chiashi and Rong Xiang and Shigeo Maruyama and S. V. Rotkin},
title = {One-Dimensional van der Waals Heterojunction Diode.},
journal = {ACS Nano},
year = {2021},
volume = {15},
publisher = {American Chemical Society (ACS)},
month = {mar},
url = {https://doi.org/10.1021%2Facsnano.1c00657},
number = {3},
pages = {5600--5609},
doi = {10.1021/acsnano.1c00657}
}
MLA
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MLA Copy
Feng, Ya., et al. “One-Dimensional van der Waals Heterojunction Diode..” ACS Nano, vol. 15, no. 3, Mar. 2021, pp. 5600-5609. https://doi.org/10.1021%2Facsnano.1c00657.
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