ACS Nano, volume 16, issue 7, pages 11027-11035
Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots
2
Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
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Publication type: Journal Article
Publication date: 2022-07-06
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm2/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1Se to 1Pe state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1Se to 1Pe transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 109 Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO2 gas sensor with a range from 0.25 to 2000 ppm.
Top-30
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1 publication, 3.57%
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Citations by publishers
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Multidisciplinary Digital Publishing Institute (MDPI)
7 publications, 25%
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7 publications, 25%
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3 publications, 10.71%
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Springer Nature
3 publications, 10.71%
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3 publications, 10.71%
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Optical Society of America
1 publication, 3.57%
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Wiley
1 publication, 3.57%
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IEEE
1 publication, 3.57%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 3.57%
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Chen M. et al. Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots // ACS Nano. 2022. Vol. 16. No. 7. pp. 11027-11035.
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Chen M., Hao Q., Luo Y., Tang X. Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots // ACS Nano. 2022. Vol. 16. No. 7. pp. 11027-11035.
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TY - JOUR
DO - 10.1021/acsnano.2c03631
UR - https://doi.org/10.1021/acsnano.2c03631
TI - Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots
T2 - ACS Nano
AU - Hao, Qun
AU - Luo, Yuning
AU - Chen, Meng-Lu
AU - Tang, Xin
PY - 2022
DA - 2022/07/06 00:00:00
PB - American Chemical Society (ACS)
SP - 11027-11035
IS - 7
VL - 16
SN - 1936-0851
SN - 1936-086X
ER -
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@article{2022_Chen,
author = {Qun Hao and Yuning Luo and Meng-Lu Chen and Xin Tang},
title = {Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots},
journal = {ACS Nano},
year = {2022},
volume = {16},
publisher = {American Chemical Society (ACS)},
month = {jul},
url = {https://doi.org/10.1021/acsnano.2c03631},
number = {7},
pages = {11027--11035},
doi = {10.1021/acsnano.2c03631}
}
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Chen, Meng-Lu, et al. “Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots.” ACS Nano, vol. 16, no. 7, Jul. 2022, pp. 11027-11035. https://doi.org/10.1021/acsnano.2c03631.