Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
Renjing Xu
1
,
Shuang Zhang
1
,
Fan Wang
1
,
Jiong Yang
1
,
Zhu Wang
2
,
Jiajie Pei
1
,
Ye Win Myint
1
,
Bobin Xing
1
,
Z-J. Yu
2
,
L. Fu
1
,
Qing Qin
1
,
Yuerui Lu
1
Publication type: Journal Article
Publication date: 2016-02-04
scimago Q1
wos Q1
SJR: 4.497
CiteScore: 24.2
Impact factor: 16.0
ISSN: 19360851, 1936086X
PubMed ID:
26713882
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
We report a trion (charged exciton) binding energy of ∼162 meV in few-layer phosphorene at room temperature, which is nearly 1-2 orders of magnitude larger than those in two-dimensional (2D) transition metal dichalcogenide semiconductors (20-30 meV) and quasi-2D quantum wells (∼1-5 meV). Such a large binding energy has only been observed in truly one-dimensional (1D) materials such as carbon nanotubes, whose optoelectronic applications have been severely hindered by their intrinsically small optical cross sections. Phosphorene offers an elegant way to overcome this hurdle by enabling quasi-1D excitonic and trionic behaviors in a large 2D area, allowing optoelectronic integration. We experimentally validated the quasi-1D nature of excitonic and trionic dynamics in phospherene by demonstrating completely linearly polarized light emission from excitons and trions in few-layer phosphorene. The implications of the extraordinarily large trion binding energy in a higher-than-one-dimensional material are far-reaching. It provides a room-temperature 2D platform to observe the fundamental many-body interactions in the quasi-1D region.
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Total citations:
97
Citations from 2025:
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(5.15%)
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GOST
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Xu R. et al. Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors // ACS Nano. 2016. Vol. 10. No. 2. pp. 2046-2053.
GOST all authors (up to 50)
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Xu R., Zhang S., Wang F., Yang J., Wang Z., Pei J., Myint Y. W., Xing B., Yu Z., Fu L., Qin Q., Lu Y. Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors // ACS Nano. 2016. Vol. 10. No. 2. pp. 2046-2053.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1021/acsnano.5b06193
UR - https://doi.org/10.1021/acsnano.5b06193
TI - Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
T2 - ACS Nano
AU - Xu, Renjing
AU - Zhang, Shuang
AU - Wang, Fan
AU - Yang, Jiong
AU - Wang, Zhu
AU - Pei, Jiajie
AU - Myint, Ye Win
AU - Xing, Bobin
AU - Yu, Z-J.
AU - Fu, L.
AU - Qin, Qing
AU - Lu, Yuerui
PY - 2016
DA - 2016/02/04
PB - American Chemical Society (ACS)
SP - 2046-2053
IS - 2
VL - 10
PMID - 26713882
SN - 1936-0851
SN - 1936-086X
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2016_Xu,
author = {Renjing Xu and Shuang Zhang and Fan Wang and Jiong Yang and Zhu Wang and Jiajie Pei and Ye Win Myint and Bobin Xing and Z-J. Yu and L. Fu and Qing Qin and Yuerui Lu},
title = {Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors},
journal = {ACS Nano},
year = {2016},
volume = {10},
publisher = {American Chemical Society (ACS)},
month = {feb},
url = {https://doi.org/10.1021/acsnano.5b06193},
number = {2},
pages = {2046--2053},
doi = {10.1021/acsnano.5b06193}
}
Cite this
MLA
Copy
Xu, Renjing, et al. “Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors.” ACS Nano, vol. 10, no. 2, Feb. 2016, pp. 2046-2053. https://doi.org/10.1021/acsnano.5b06193.