ACS Nano, volume 11, issue 6, pages 5614-5622

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

Publication typeJournal Article
Publication date2017-06-05
Journal: ACS Nano
Q1
Q1
SJR4.593
CiteScore26.0
Impact factor15.8
ISSN19360851, 1936086X
General Physics and Astronomy
General Materials Science
General Engineering
Abstract
Near-to-mid-infrared photodetection technologies could be widely deployed to advance the infrastructures of surveillance, environmental monitoring, and manufacturing, if the detection devices are low-cost, in compact format, and with high performance. For such application requirements, colloidal quantum dot (QD) based photodetectors stand out as particularly promising due to the solution processability and ease of integration with silicon technologies; unfortunately, the detectivity of the QD photodetectors toward longer wavelengths has so far been low. Here we overcome this performance bottleneck through synergistic efforts between synthetic chemistry and device engineering. First, we developed a fully automated aprotic solvent, gas-injection synthesis method that allows scalable fabrication of large sized HgTe QDs with high quality, exhibiting a record high photoluminescence quantum yield of 17% at the photoluminescence peak close to 2.1 μm. Second, through gating a phototransistor structure we demonstrate room-temperature device response to reach >2 × 1010 cm Hz1/2 W-1 (at 2 kHz modulation frequency) specific detectivity beyond the 2 μm wavelength range, which is comparable to commercial epitaxial-grown photodetectors. To demonstrate the practical application of the QD phototransistor, we incorporated the device in a carbon monoxide gas sensing system and demonstrated reliable measurement of gas concentration. This work represents an important step forward in commercializing QD-based infrared detection technologies.

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GOST Copy
Chen M. et al. Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm // ACS Nano. 2017. Vol. 11. No. 6. pp. 5614-5622.
GOST all authors (up to 50) Copy
Chen M., Lu H., Abdelazim N. M., Zhu Y., Wang Z., Ren W., Kershaw S. V., Rogach A. L., Zhao N. Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm // ACS Nano. 2017. Vol. 11. No. 6. pp. 5614-5622.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsnano.7b00972
UR - https://doi.org/10.1021/acsnano.7b00972
TI - Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm
T2 - ACS Nano
AU - Chen, Mengyu
AU - Lu, Haipeng
AU - Abdelazim, Nema M
AU - Zhu, Yihua
AU - Wang, Zhen
AU - Ren, Wei
AU - Kershaw, Stephen V.
AU - Rogach, Andrey L.
AU - Zhao, Ni
PY - 2017
DA - 2017/06/05
PB - American Chemical Society (ACS)
SP - 5614-5622
IS - 6
VL - 11
SN - 1936-0851
SN - 1936-086X
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2017_Chen,
author = {Mengyu Chen and Haipeng Lu and Nema M Abdelazim and Yihua Zhu and Zhen Wang and Wei Ren and Stephen V. Kershaw and Andrey L. Rogach and Ni Zhao},
title = {Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm},
journal = {ACS Nano},
year = {2017},
volume = {11},
publisher = {American Chemical Society (ACS)},
month = {jun},
url = {https://doi.org/10.1021/acsnano.7b00972},
number = {6},
pages = {5614--5622},
doi = {10.1021/acsnano.7b00972}
}
MLA
Cite this
MLA Copy
Chen, Mengyu, et al. “Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm.” ACS Nano, vol. 11, no. 6, Jun. 2017, pp. 5614-5622. https://doi.org/10.1021/acsnano.7b00972.
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