ACS Photonics

Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

Yang Ji 1
YIFEI LV 1
Ziyang He 2
Binbin Wang 2
Shiwu Chen 1
Feng Xiao 1
Huicheng Hu 1
Mengxuan Yu 2
Huan Liu 2, 3, 4
Xinzheng Lan 1, 2, 3, 4
Hsien-Yi Hsu 5
Haisheng Song 1, 2, 3, 4
Jiang Tang 1, 2, 3, 4
Publication typeJournal Article
Publication date2023-01-09
Journal: ACS Photonics
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor7
ISSN23304022, 23304022
Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
Infrared photodetectors (PDs) based on epitaxial semiconductors occupy the majority of the market, but their high cost from material growth and device integration limits their application fields. Colloidal quantum dots (CQDs) provide a high potential candidate for infrared PDs due to their unique infrared sensitivity, tunable physical and chemical properties, and good compatibility with readout integration circuits. In particular, HgTe CQD PDs have demonstrated a wide detection range from short-wave to long-wave infrared. Although significant progress has been achieved in HgTe CQD infrared PDs, they are still in the primary stage of QD synthesis and prototype device fabrication. Here, we develop a new p–i–n photodiode from the traditional p–i device structure. Bismuth sulfide (Bi2S3) films were adopted as the electron transport layer, which could favor uniform absorber deposition, superior charge extraction, and suppressed interfacial loss. The Bi2S3-based photodiodes have achieved a room-temperature dark current density as low as 1.6 × 10–5 A/cm2 at −400 mV. Furthermore, their specific detectivity (D*) achieves ∼1011 Jones at room temperature.

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Citations by publishers

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5
American Chemical Society (ACS)
5 publications, 41.67%
Wiley
3 publications, 25%
Royal Society of Chemistry (RSC)
1 publication, 8.33%
American Institute of Physics (AIP)
1 publication, 8.33%
Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 8.33%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 8.33%
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GOST |
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GOST Copy
Yang Ji et al. Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors // ACS Photonics. 2023.
GOST all authors (up to 50) Copy
Yang Ji, LV Y., He Z., Wang B., Chen S., Xiao F., Hu H., Yu M., Liu H., Lan X., Hsu H., Song H., Tang J. Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors // ACS Photonics. 2023.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1021/acsphotonics.2c01145
UR - https://doi.org/10.1021/acsphotonics.2c01145
TI - Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors
T2 - ACS Photonics
AU - Yang Ji
AU - LV, YIFEI
AU - He, Ziyang
AU - Wang, Binbin
AU - Chen, Shiwu
AU - Xiao, Feng
AU - Hu, Huicheng
AU - Yu, Mengxuan
AU - Liu, Huan
AU - Lan, Xinzheng
AU - Hsu, Hsien-Yi
AU - Song, Haisheng
AU - Tang, Jiang
PY - 2023
DA - 2023/01/09 00:00:00
PB - American Chemical Society (ACS)
SN - 2330-4022
SN - 2330-4022
ER -
BibTex
Cite this
BibTex Copy
@article{2023_Yang Ji,
author = {Yang Ji and YIFEI LV and Ziyang He and Binbin Wang and Shiwu Chen and Feng Xiao and Huicheng Hu and Mengxuan Yu and Huan Liu and Xinzheng Lan and Hsien-Yi Hsu and Haisheng Song and Jiang Tang},
title = {Bi2S3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors},
journal = {ACS Photonics},
year = {2023},
publisher = {American Chemical Society (ACS)},
month = {jan},
url = {https://doi.org/10.1021/acsphotonics.2c01145},
doi = {10.1021/acsphotonics.2c01145}
}
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