ACS Photonics, volume 6, issue 9, pages 2358-2365

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Meng-Lu Chen 1
Xinzheng Lan 1
Xin Tang 1
Yuanyuan Wang 1
Margaret H Hudson 1
Philippe Guyot-Sionnest 1
Publication typeJournal Article
Publication date2019-08-22
Journal: ACS Photonics
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor7
ISSN23304022, 23304022
Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusti...

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GOST |
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GOST Copy
Chen M. et al. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
GOST all authors (up to 50) Copy
Chen M., Lan X., Tang X., Wang Y., Hudson M. H., Talapin D. V., Guyot-Sionnest P. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsphotonics.9b01050
UR - https://doi.org/10.1021/acsphotonics.9b01050
TI - High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors
T2 - ACS Photonics
AU - Lan, Xinzheng
AU - Chen, Meng-Lu
AU - Hudson, Margaret H
AU - Talapin, Dmitri V.
AU - Guyot-Sionnest, Philippe
AU - Tang, Xin
AU - Wang, Yuanyuan
PY - 2019
DA - 2019/08/22 00:00:00
PB - American Chemical Society (ACS)
SP - 2358-2365
IS - 9
VL - 6
SN - 2330-4022
SN - 2330-4022
ER -
BibTex |
Cite this
BibTex Copy
@article{2019_Chen,
author = {Xinzheng Lan and Meng-Lu Chen and Margaret H Hudson and Dmitri V. Talapin and Philippe Guyot-Sionnest and Xin Tang and Yuanyuan Wang},
title = {High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors},
journal = {ACS Photonics},
year = {2019},
volume = {6},
publisher = {American Chemical Society (ACS)},
month = {aug},
url = {https://doi.org/10.1021/acsphotonics.9b01050},
number = {9},
pages = {2358--2365},
doi = {10.1021/acsphotonics.9b01050}
}
MLA
Cite this
MLA Copy
Chen, Meng-Lu, et al. “High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors.” ACS Photonics, vol. 6, no. 9, Aug. 2019, pp. 2358-2365. https://doi.org/10.1021/acsphotonics.9b01050.
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