ACS Photonics, volume 6, issue 9, pages 2358-2365
High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors
Publication type: Journal Article
Publication date: 2019-08-22
Journal:
ACS Photonics
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 7
ISSN: 23304022, 23304022
Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusti...
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Citations by publishers
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American Chemical Society (ACS)
32 publications, 37.21%
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Multidisciplinary Digital Publishing Institute (MDPI)
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Elsevier
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American Institute of Physics (AIP)
2 publications, 2.33%
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1 publication, 1.16%
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Walter de Gruyter
1 publication, 1.16%
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American Association for the Advancement of Science (AAAS)
1 publication, 1.16%
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Taylor & Francis
1 publication, 1.16%
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IEEE
1 publication, 1.16%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 1.16%
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5
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35
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Chen M. et al. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
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Chen M., Lan X., Tang X., Wang Y., Hudson M. H., Talapin D. V., Guyot-Sionnest P. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
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TY - JOUR
DO - 10.1021/acsphotonics.9b01050
UR - https://doi.org/10.1021/acsphotonics.9b01050
TI - High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors
T2 - ACS Photonics
AU - Lan, Xinzheng
AU - Chen, Meng-Lu
AU - Hudson, Margaret H
AU - Talapin, Dmitri V.
AU - Guyot-Sionnest, Philippe
AU - Tang, Xin
AU - Wang, Yuanyuan
PY - 2019
DA - 2019/08/22 00:00:00
PB - American Chemical Society (ACS)
SP - 2358-2365
IS - 9
VL - 6
SN - 2330-4022
SN - 2330-4022
ER -
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@article{2019_Chen,
author = {Xinzheng Lan and Meng-Lu Chen and Margaret H Hudson and Dmitri V. Talapin and Philippe Guyot-Sionnest and Xin Tang and Yuanyuan Wang},
title = {High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors},
journal = {ACS Photonics},
year = {2019},
volume = {6},
publisher = {American Chemical Society (ACS)},
month = {aug},
url = {https://doi.org/10.1021/acsphotonics.9b01050},
number = {9},
pages = {2358--2365},
doi = {10.1021/acsphotonics.9b01050}
}
Cite this
MLA
Copy
Chen, Meng-Lu, et al. “High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors.” ACS Photonics, vol. 6, no. 9, Aug. 2019, pp. 2358-2365. https://doi.org/10.1021/acsphotonics.9b01050.