ACS Photonics, volume 6, issue 9, pages 2358-2365

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Meng-Lu Chen 1
Xinzheng Lan 1
Xin Tang 1
Yuanyuan Wang 1
Margaret H Hudson 1
Philippe Guyot-Sionnest 1
Publication typeJournal Article
Publication date2019-08-22
Journal: ACS Photonics
Q1
Q1
SJR2.089
CiteScore11.9
Impact factor6.5
ISSN23304022
Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusti...

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Cite this
GOST |
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GOST Copy
Chen M. et al. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
GOST all authors (up to 50) Copy
Chen M., Lan X., Tang X., Wang Y., Hudson M. H., Talapin D. V., Guyot-Sionnest P. High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors // ACS Photonics. 2019. Vol. 6. No. 9. pp. 2358-2365.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/acsphotonics.9b01050
UR - https://doi.org/10.1021/acsphotonics.9b01050
TI - High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors
T2 - ACS Photonics
AU - Chen, Meng-Lu
AU - Lan, Xinzheng
AU - Tang, Xin
AU - Wang, Yuanyuan
AU - Hudson, Margaret H
AU - Talapin, Dmitri V.
AU - Guyot-Sionnest, Philippe
PY - 2019
DA - 2019/08/22
PB - American Chemical Society (ACS)
SP - 2358-2365
IS - 9
VL - 6
SN - 2330-4022
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2019_Chen,
author = {Meng-Lu Chen and Xinzheng Lan and Xin Tang and Yuanyuan Wang and Margaret H Hudson and Dmitri V. Talapin and Philippe Guyot-Sionnest},
title = {High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors},
journal = {ACS Photonics},
year = {2019},
volume = {6},
publisher = {American Chemical Society (ACS)},
month = {aug},
url = {https://doi.org/10.1021/acsphotonics.9b01050},
number = {9},
pages = {2358--2365},
doi = {10.1021/acsphotonics.9b01050}
}
MLA
Cite this
MLA Copy
Chen, Meng-Lu, et al. “High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors.” ACS Photonics, vol. 6, no. 9, Aug. 2019, pp. 2358-2365. https://doi.org/10.1021/acsphotonics.9b01050.
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