ACS applied materials & interfaces, volume 6, issue 17, pages 15040-15051

Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices

Benoît H. Lessard ¹

Jeremy D Dang ¹

Trevor J. Grant ¹

Dong Gao ²

Dwight Seferos ^{1, 2}

Timothy P Bender ^{1, 2, 3}

Hide authors affiliations Show authors affiliations: 3 affiliations

Department of Chemical Engineering and Applied Chemistry, University of Toronto, 200 College Street, Toronto, Ontario M5S 3E5, Canada |

Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada |

Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada |

Publication type: Journal Article

Publication date: 2014-08-22

American Chemical Society (ACS)

Journal: ACS applied materials & interfaces

Quartile SCImago

Quartile WOS

Impact factor: 9.5

ISSN: 19448244, 19448252

DOI: 10.1021/am503038t

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General Materials Science

Abstract

Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

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Springer Nature	Springer Nature, 2, 2.86% Springer Nature 2 publications, 2.86%
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American Institute of Physics (AIP)	American Institute of Physics (AIP), 1, 1.43% American Institute of Physics (AIP) 1 publication, 1.43%
International Union of Crystallography (IUCr)	International Union of Crystallography (IUCr), 1, 1.43% International Union of Crystallography (IUCr) 1 publication, 1.43%
	5 10 15 20 25

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Lessard B. H. et al. Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices // ACS applied materials & interfaces. 2014. Vol. 6. No. 17. pp. 15040-15051.

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Lessard B. H., Dang J. D., Grant T. J., Gao D., Seferos D., Bender T. P. Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices // ACS applied materials & interfaces. 2014. Vol. 6. No. 17. pp. 15040-15051.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1021/am503038t

UR - https://doi.org/10.1021/am503038t

TI - Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices

T2 - ACS applied materials & interfaces

AU - Dang, Jeremy D

AU - Lessard, Benoît H.

AU - Grant, Trevor J.

AU - Gao, Dong

AU - Seferos, Dwight

AU - Bender, Timothy P

PY - 2014

DA - 2014/08/22 00:00:00

PB - American Chemical Society (ACS)

SP - 15040-15051

IS - 17

VL - 6

SN - 1944-8244

SN - 1944-8252

ER -

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BibTex Copy

@article{2014_Lessard,

author = {Jeremy D Dang and Benoît H. Lessard and Trevor J. Grant and Dong Gao and Dwight Seferos and Timothy P Bender},

title = {Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices},

journal = {ACS applied materials & interfaces},

year = {2014},

volume = {6},

publisher = {American Chemical Society (ACS)},

month = {aug},

url = {https://doi.org/10.1021/am503038t},

number = {17},

pages = {15040--15051},

doi = {10.1021/am503038t}

}

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Lessard, Benoît H., et al. “Bis(tri-n-hexylsilyl oxide) Silicon Phthalocyanine: A Unique Additive in Ternary Bulk Heterojunction Organic Photovoltaic Devices.” ACS applied materials & interfaces, vol. 6, no. 17, Aug. 2014, pp. 15040-15051. https://doi.org/10.1021/am503038t.

Found error?

Publisher

American Chemical Society (ACS)

Journal

ACS applied materials & interfaces

Quartile SCImago

Quartile WOS

Impact factor

9.5

ISSN

19448244 (Print)
19448252 (Electronic)