ACS applied materials & interfaces

, volume 7 , issue 4 , pages 2149-2152

Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

Ariel Ben-sasson ¹

Daniel Azulai ²

Hagit Gilon ²

Antonio Facchetti ³

Gil Markovich ²

Nir Tessler ¹

Hide authors affiliations Show authors affiliations: 3 affiliations

Sara and Moshe Zisapel Nano-Electronics Center, Department of Electrical Engineering, Technion−Israel Institute of Technology, Haifa 3200, Israel |

School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel |

Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, United States |

Publication type: Journal Article

Publication date: 2015-01-23

American Chemical Society (ACS)

ACS applied materials & interfaces

scimago Q1

wos Q1

SJR: 1.921

CiteScore: 14.5

Impact factor: 8.2

ISSN: 19448244, 19448252

DOI: 10.1021/am505174p

Copy DOI

PubMed ID: 25602371

General Materials Science

Abstract

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires’ microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 105 and high current density (>1 mA cm–2 at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

Found

1 citation

Popov Victor

PhD in Chemistry

36 publications, 201 citations

h-index: 8

Moscow Institute of Physics and Technology

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GOST |

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GOST Copy

Ben-sasson A. et al. Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor // ACS applied materials & interfaces. 2015. Vol. 7. No. 4. pp. 2149-2152.

GOST all authors (up to 50) Copy

Ben-sasson A., Azulai D., Gilon H., Facchetti A., Markovich G., Tessler N. Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor // ACS applied materials & interfaces. 2015. Vol. 7. No. 4. pp. 2149-2152.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1021/am505174p

UR - https://doi.org/10.1021/am505174p

TI - Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

T2 - ACS applied materials & interfaces

AU - Ben-sasson, Ariel

AU - Azulai, Daniel

AU - Gilon, Hagit

AU - Facchetti, Antonio

AU - Markovich, Gil

AU - Tessler, Nir

PY - 2015

DA - 2015/01/23

PB - American Chemical Society (ACS)

SP - 2149-2152

IS - 4

VL - 7

PMID - 25602371

SN - 1944-8244

SN - 1944-8252

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2015_Ben-sasson,

author = {Ariel Ben-sasson and Daniel Azulai and Hagit Gilon and Antonio Facchetti and Gil Markovich and Nir Tessler},

title = {Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor},

journal = {ACS applied materials & interfaces},

year = {2015},

volume = {7},

publisher = {American Chemical Society (ACS)},

month = {jan},

url = {https://doi.org/10.1021/am505174p},

number = {4},

pages = {2149--2152},

doi = {10.1021/am505174p}

}

MLA

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MLA Copy

Ben-sasson, Ariel, et al. “Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor.” ACS applied materials & interfaces, vol. 7, no. 4, Jan. 2015, pp. 2149-2152. https://doi.org/10.1021/am505174p.

Publisher

American Chemical Society (ACS)

Journal

ACS applied materials & interfaces

scimago Q1

wos Q1

SJR

1.921

CiteScore

14.5

Impact factor

8.2

ISSN

19448244 (Print)

19448252 (Electronic)