Chemistry of Materials, volume 16, issue 23, pages 4772-4776

Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents

Publication typeJournal Article
Publication date2004-07-17
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor8.6
ISSN08974756, 15205002
Materials Chemistry
General Chemistry
General Chemical Engineering
Abstract
Chloroform is a general solvent for poly(3-hexylthiophene) (P3HT) active layers in field-effect transistors. However, its low boiling point and rapid evaporation limit the time for crystallization during the spin-coating process, and field-effect mobilities achieved for P3HT films spin-coated from chloroform are typically on the order of 0.01 cm2/(V s). Here we investigate a range of solvents with higher boiling points. We find that 1,2,4-trichlorobenzene with good solubility and a high boiling point significantly improves the field-effect mobilities up to 0.12 cm2/(V s) with on:off ratios of 106. By controlling the microstructure through the choice of solvent while keeping the molecular weight fixed, we observe a clear correlation between the field-effect mobility and the degree of microcrystalline order as measured by X-ray diffraction, as well as the strength of polaronic relaxation of charge carriers in the accumulation layer as measured by optical spectroscopy of field-induced charge.

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GOST |
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GOST Copy
Chang J. F. et al. Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents // Chemistry of Materials. 2004. Vol. 16. No. 23. pp. 4772-4776.
GOST all authors (up to 50) Copy
Chang J. F., Sun B., Breiby D. W., Nielsen M. R., Sølling T. I., Giles M., McCulloch I., Sirringhaus H. Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents // Chemistry of Materials. 2004. Vol. 16. No. 23. pp. 4772-4776.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/cm049617w
UR - https://doi.org/10.1021/cm049617w
TI - Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents
T2 - Chemistry of Materials
AU - Giles, Mark
AU - Chang, Jui Fen
AU - Sun, Baoquan
AU - Breiby, D. W.
AU - Nielsen, Martin R.
AU - Sølling, Theis I.
AU - McCulloch, Iain
AU - Sirringhaus, Henning
PY - 2004
DA - 2004/07/17 00:00:00
PB - American Chemical Society (ACS)
SP - 4772-4776
IS - 23
VL - 16
SN - 0897-4756
SN - 1520-5002
ER -
BibTex |
Cite this
BibTex Copy
@article{2004_Chang,
author = {Mark Giles and Jui Fen Chang and Baoquan Sun and D. W. Breiby and Martin R. Nielsen and Theis I. Sølling and Iain McCulloch and Henning Sirringhaus},
title = {Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents},
journal = {Chemistry of Materials},
year = {2004},
volume = {16},
publisher = {American Chemical Society (ACS)},
month = {jul},
url = {https://doi.org/10.1021/cm049617w},
number = {23},
pages = {4772--4776},
doi = {10.1021/cm049617w}
}
MLA
Cite this
MLA Copy
Chang, Jui Fen, et al. “Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents.” Chemistry of Materials, vol. 16, no. 23, Jul. 2004, pp. 4772-4776. https://doi.org/10.1021/cm049617w.
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