Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals
Тип публикации: Journal Article
Дата публикации: 2003-05-01
scimago Q1
wos Q3
БС2
SJR: 0.742
CiteScore: 5.3
Impact factor: 2.9
ISSN: 15206106, 15205207, 10895647
Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry
Краткое описание
We have obtained the electron density of danburite by means of ab initio Perturbed Ion (aiPI) quantum mechanical calculations and fully characterized its topological features, as required for the analysis of crystal bonding in the light of Bader's atoms in molecules (AIM) theory. Our theoretical results are compared with the experimental determination by Downs and Swope (J. Phys. Chem. 1992, 96, 4834). Each B and Si ion is bound to its four nearest oxide ions in a deformed tetrahedral disposition, whereas Ca is bonded to seven oxide ions. What makes this mineral most interesting is a rich collection of O−O long-distance bond paths. Their existence is examined in several crystalline oxides and gas phase molecules. The occurrence of bond paths is not simply due to the distance between atoms but rather is a consequence of the molecular and crystal geometry. It is shown that the electron density at the bond critical point decreases exponentially as the distance between atoms increases. This relationship group...
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Luaña V. et al. Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals // Journal of Physical Chemistry B. 2003. Vol. 107. No. 21. pp. 4912-4921.
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Luaña V., Costales A., Mori-Sánchez P., Pendás A. Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals // Journal of Physical Chemistry B. 2003. Vol. 107. No. 21. pp. 4912-4921.
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TY - JOUR
DO - 10.1021/jp022374f
UR - https://doi.org/10.1021/jp022374f
TI - Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals
T2 - Journal of Physical Chemistry B
AU - Luaña, Víctor
AU - Costales, Aurora
AU - Mori-Sánchez, Paula
AU - Pendás, A.M.
PY - 2003
DA - 2003/05/01
PB - American Chemical Society (ACS)
SP - 4912-4921
IS - 21
VL - 107
SN - 1520-6106
SN - 1520-5207
SN - 1089-5647
ER -
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@article{2003_Luaña,
author = {Víctor Luaña and Aurora Costales and Paula Mori-Sánchez and A.M. Pendás},
title = {Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals},
journal = {Journal of Physical Chemistry B},
year = {2003},
volume = {107},
publisher = {American Chemical Society (ACS)},
month = {may},
url = {https://doi.org/10.1021/jp022374f},
number = {21},
pages = {4912--4921},
doi = {10.1021/jp022374f}
}
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Luaña, Víctor, et al. “Ions in Crystals: The Topology of the Electron Density in Ionic Materials. 4. The Danburite (CaB2Si2O8) Case and the Occurrence of Oxide−Oxide Bond Paths in Crystals.” Journal of Physical Chemistry B, vol. 107, no. 21, May. 2003, pp. 4912-4921. https://doi.org/10.1021/jp022374f.