том 117 издание 16 страницы 4412-4421

Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.

Тип публикацииJournal Article
Дата публикации2012-12-19
scimago Q1
wos Q3
БС2
SJR0.742
CiteScore5.3
Impact factor2.9
ISSN15206106, 15205207, 10895647
Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry
Краткое описание
Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond pump/probe spectroscopic experiments are performed on freshly synthesized and aged CdTe NCs. These experiments reveal fast electron trapping for aged CdTe NCs from the single excitonic state (X). Pump fluence dependence with excitonic state-resolved optical pumping enables directly populating the biexcitonic state (XX), which produces further accelerated electron trapping rates. This increase in electron trapping rate triggers coherent acoustic phonons by virtue of the ultrafast impulsive time scale of the surface trapping process. The observed trapping rates are discussed in terms of electron transfer theory.
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ГОСТ |
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Saari J. I. et al. Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes. // Journal of Physical Chemistry B. 2012. Vol. 117. No. 16. pp. 4412-4421.
ГОСТ со всеми авторами (до 50) Скопировать
Saari J. I., Dias E. A., Reifsnyder D., Krause M. M., Walsh B. R., Murray C. B., Kambhampati P. Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes. // Journal of Physical Chemistry B. 2012. Vol. 117. No. 16. pp. 4412-4421.
RIS |
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TY - JOUR
DO - 10.1021/jp307668g
UR - https://doi.org/10.1021/jp307668g
TI - Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.
T2 - Journal of Physical Chemistry B
AU - Saari, Jonathan I.
AU - Dias, Eva A.
AU - Reifsnyder, Danielle
AU - Krause, Michael M.
AU - Walsh, Brenna R
AU - Murray, Christopher B
AU - Kambhampati, Patanjali
PY - 2012
DA - 2012/12/19
PB - American Chemical Society (ACS)
SP - 4412-4421
IS - 16
VL - 117
PMID - 23186016
SN - 1520-6106
SN - 1520-5207
SN - 1089-5647
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2012_Saari,
author = {Jonathan I. Saari and Eva A. Dias and Danielle Reifsnyder and Michael M. Krause and Brenna R Walsh and Christopher B Murray and Patanjali Kambhampati},
title = {Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.},
journal = {Journal of Physical Chemistry B},
year = {2012},
volume = {117},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/jp307668g},
number = {16},
pages = {4412--4421},
doi = {10.1021/jp307668g}
}
MLA
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Saari, Jonathan I., et al. “Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes..” Journal of Physical Chemistry B, vol. 117, no. 16, Dec. 2012, pp. 4412-4421. https://doi.org/10.1021/jp307668g.