Journal of Physical Chemistry B, volume 117, issue 16, pages 4412-4421
Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.
Publication type: Journal Article
Publication date: 2012-12-19
Journal:
Journal of Physical Chemistry B
Quartile SCImago
Q1
Quartile WOS
Q3
Impact factor: 3.3
ISSN: 15206106, 15205207
Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry
Abstract
Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond pump/probe spectroscopic experiments are performed on freshly synthesized and aged CdTe NCs. These experiments reveal fast electron trapping for aged CdTe NCs from the single excitonic state (X). Pump fluence dependence with excitonic state-resolved optical pumping enables directly populating the biexcitonic state (XX), which produces further accelerated electron trapping rates. This increase in electron trapping rate triggers coherent acoustic phonons by virtue of the ultrafast impulsive time scale of the surface trapping process. The observed trapping rates are discussed in terms of electron transfer theory.
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1 publication, 1.92%
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1 publication, 1.92%
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1 publication, 1.92%
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1 publication, 1.92%
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1 publication, 1.92%
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1 publication, 1.92%
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1 publication, 1.92%
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Citations by publishers
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5
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American Chemical Society (ACS)
30 publications, 57.69%
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Elsevier
8 publications, 15.38%
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Wiley
5 publications, 9.62%
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Royal Society of Chemistry (RSC)
3 publications, 5.77%
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American Institute of Physics (AIP)
2 publications, 3.85%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 1.92%
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Springer Nature
1 publication, 1.92%
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Pleiades Publishing
1 publication, 1.92%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 1.92%
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5
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Saari J. I. et al. Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes. // Journal of Physical Chemistry B. 2012. Vol. 117. No. 16. pp. 4412-4421.
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Saari J. I., Dias E. A., Reifsnyder D., Krause M. M., Walsh B. R., Murray C. B., Kambhampati P. Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes. // Journal of Physical Chemistry B. 2012. Vol. 117. No. 16. pp. 4412-4421.
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TY - JOUR
DO - 10.1021/jp307668g
UR - https://doi.org/10.1021/jp307668g
TI - Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.
T2 - Journal of Physical Chemistry B
AU - Saari, Jonathan I.
AU - Dias, Eva A.
AU - Reifsnyder, Danielle
AU - Krause, Michael M.
AU - Walsh, Brenna R
AU - Murray, Christopher B
AU - Kambhampati, Patanjali
PY - 2012
DA - 2012/12/19 00:00:00
PB - American Chemical Society (ACS)
SP - 4412-4421
IS - 16
VL - 117
SN - 1520-6106
SN - 1520-5207
ER -
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@article{2012_Saari,
author = {Jonathan I. Saari and Eva A. Dias and Danielle Reifsnyder and Michael M. Krause and Brenna R Walsh and Christopher B Murray and Patanjali Kambhampati},
title = {Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.},
journal = {Journal of Physical Chemistry B},
year = {2012},
volume = {117},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/jp307668g},
number = {16},
pages = {4412--4421},
doi = {10.1021/jp307668g}
}
Cite this
MLA
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Saari, Jonathan I., et al. “Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes..” Journal of Physical Chemistry B, vol. 117, no. 16, Dec. 2012, pp. 4412-4421. https://doi.org/10.1021/jp307668g.