Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration
Тип публикации: Journal Article
Дата публикации: 2009-04-08
scimago Q2
wos Q2
БС2
SJR: 0.634
CiteScore: 4.8
Impact factor: 2.8
ISSN: 10895639, 15205215
PubMed ID:
19354223
Physical and Theoretical Chemistry
Краткое описание
Gas-phase front-side attack identity SN2(C) and SN2(Si) reactions, CH3X1 + X2− → CH3X2 + X1− and SiH3X1 + X2− → SiH3X2 + X1− (X = F, Cl), are investigated by the ab initio method and molecular face (MF) theory. The computations have been performed at the CCSD(T)/aug-cc-pVTZ//MP2/6-311++G(3df,3pd) and CISD/aug-cc-pVDZ levels. Front-side attack identity SN2 reactions for both SiH3X and CH3X have double-well potential energy surfaces (PESs), but their transition-state positions are different relative to the positions of reactants and products: it is lower for SiH3X, and it is higher for CH3X. The minimum energy path for an SN2(Si) reaction with retention of configuration proceeds from a stable pentacoordinated anion intermediate of Cs symmetry (TBP) via a Cs transition state (SP) to a complementary pentacoordinated intermediate (TBP) and finally up to separate products. Berry pseudorotation has been observed in the front-side attack identity SN2(Si) reactions with F− and Cl− along the intrinsic reaction coordinate (IRC) routes. In addition, the geometrical transformations of front-side attack identity SN2(C) and SN2(Si) reactions based on the IRC calculations at the MP2/6-311++G(3df, 3pd) level of theory are described compared with those of corresponding back-side attack reactions. The difference between front-side attack identity SN2(C) and SN2(Si) reactions has been demonstrated. In MF theory, the potential acting on an electron in a molecule (PAEM) is an important quantity; in particular, its Dpb can measure the strength of a chemical bond in a molecule. It is found that the difference between Dpb values of reactant and transition state may be related to the activation energy for front-side and back-side attack SN2(C) and SN2(Si) reactions, and the Dpb curves along the IRC routes have features similar to those of the potential energy profiles for all of the back-side attack SN2 reactions and front-side attack SN2(Si) reaction with F−. Furthermore, according to the MF theory, the spatial dynamic changing features of the molecular shapes and the face electron density are vividly depicted for the course of the reactions.
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Yang Z., Ding Y., Zhao D. Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration // Journal of Physical Chemistry A. 2009. Vol. 113. No. 18. pp. 5432-5445.
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Yang Z., Ding Y., Zhao D. Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration // Journal of Physical Chemistry A. 2009. Vol. 113. No. 18. pp. 5432-5445.
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TY - JOUR
DO - 10.1021/jp804951w
UR - https://doi.org/10.1021/jp804951w
TI - Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration
T2 - Journal of Physical Chemistry A
AU - Yang, Zhong-zhi
AU - Ding, Yan-Li
AU - Zhao, DongXia
PY - 2009
DA - 2009/04/08
PB - American Chemical Society (ACS)
SP - 5432-5445
IS - 18
VL - 113
PMID - 19354223
SN - 1089-5639
SN - 1520-5215
ER -
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@article{2009_Yang,
author = {Zhong-zhi Yang and Yan-Li Ding and DongXia Zhao},
title = {Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration},
journal = {Journal of Physical Chemistry A},
year = {2009},
volume = {113},
publisher = {American Chemical Society (ACS)},
month = {apr},
url = {https://doi.org/10.1021/jp804951w},
number = {18},
pages = {5432--5445},
doi = {10.1021/jp804951w}
}
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Yang, Zhong-zhi, et al. “Theoretical Analysis of Gas-Phase Front-Side Attack Identity SN2(C) and SN2(Si) Reactions with Retention of Configuration.” Journal of Physical Chemistry A, vol. 113, no. 18, Apr. 2009, pp. 5432-5445. https://doi.org/10.1021/jp804951w.