том 12 издание 2 страницы 137-143

Gapless Andreev bound states in the quantum spin Hall insulator HgTe

Тип публикацииJournal Article
Дата публикации2016-08-29
scimago Q1
wos Q1
БС1
SJR14.612
CiteScore62.2
Impact factor34.9
ISSN17483387, 17483395
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
General Materials Science
Electrical and Electronic Engineering
Bioengineering
Biomedical Engineering
Краткое описание
In recent years, Majorana physics has attracted considerable attention because of exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here, we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a 2D topological insulator that exhibits the quantum spin Hall (QSH) effect. The a.c. Josephson effect demonstrates that the supercurrent has a 4π periodicity in the superconducting phase difference, as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, this response like that of a superconducting quantum interference device to a perpendicular magnetic field shows that the 4π-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest towards the QSH regime, and thus provide evidence for induced topological superconductivity in the QSH edge states.
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ГОСТ |
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Bocquillon E. et al. Gapless Andreev bound states in the quantum spin Hall insulator HgTe // Nature Nanotechnology. 2016. Vol. 12. No. 2. pp. 137-143.
ГОСТ со всеми авторами (до 50) Скопировать
Bocquillon E., Deacon R. S., Wiedenmann J., Leubner P., Klapwijk T. M., Brüne C., Ishibashi K., BUHMANN H., MOLENKAMP L. W. Gapless Andreev bound states in the quantum spin Hall insulator HgTe // Nature Nanotechnology. 2016. Vol. 12. No. 2. pp. 137-143.
RIS |
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TY - JOUR
DO - 10.1038/nnano.2016.159
UR - https://doi.org/10.1038/nnano.2016.159
TI - Gapless Andreev bound states in the quantum spin Hall insulator HgTe
T2 - Nature Nanotechnology
AU - Bocquillon, Erwann
AU - Deacon, Russell S
AU - Wiedenmann, Jonas
AU - Leubner, Philipp
AU - Klapwijk, Teunis M
AU - Brüne, Christoph
AU - Ishibashi, Koji
AU - BUHMANN, HARTMUT
AU - MOLENKAMP, LAURENS W.
PY - 2016
DA - 2016/08/29
PB - Springer Nature
SP - 137-143
IS - 2
VL - 12
PMID - 27570940
SN - 1748-3387
SN - 1748-3395
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2016_Bocquillon,
author = {Erwann Bocquillon and Russell S Deacon and Jonas Wiedenmann and Philipp Leubner and Teunis M Klapwijk and Christoph Brüne and Koji Ishibashi and HARTMUT BUHMANN and LAURENS W. MOLENKAMP},
title = {Gapless Andreev bound states in the quantum spin Hall insulator HgTe},
journal = {Nature Nanotechnology},
year = {2016},
volume = {12},
publisher = {Springer Nature},
month = {aug},
url = {https://doi.org/10.1038/nnano.2016.159},
number = {2},
pages = {137--143},
doi = {10.1038/nnano.2016.159}
}
MLA
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Bocquillon, Erwann, et al. “Gapless Andreev bound states in the quantum spin Hall insulator HgTe.” Nature Nanotechnology, vol. 12, no. 2, Aug. 2016, pp. 137-143. https://doi.org/10.1038/nnano.2016.159.