Nature Physics, volume 13, issue 7, pages 683-687

Quantum spin Hall state in monolayer 1T'-WTe2

Shujie Tang 1, 2, 3, 4, 5
Chaofan Zhang 1, 2
Dillon Wong 6
Zahra Pedramrazi 6
Hsin-Zon Tsai 6
Chunjing Jia 1, 2
Brian Moritz 1
Martin Claassen 1
Hyejin Ryu 3, 7, 8
Salman Kahn 6
Juan Jiang 3, 5, 9
Hao Yan 1, 2
Makoto Hashimoto 10
D. Lu 10
Robert G. Moore 1, 2
CHAN-CUK HWANG 9
Choongyu Hwang 8
Zahid Hussain 3
Yulin Chen 11
Miguel M Ugeda 12, 13
Zhi Liu 4, 5
Xiaoming Xie 4, 5
Thomas P. Devereaux 1, 2
Michael F Crommie 6, 14, 15
Sung-Kwan Mo 3
Zhi Xun Shen 1, 2
Show full list: 26 authors
4
 
State Key Laboratory of Functional Materials for informatics, Shanghai Institute of Microsystem and information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Publication typeJournal Article
Publication date2017-06-26
Journal: Nature Physics
scimago Q1
SJR8.228
CiteScore30.4
Impact factor17.6
ISSN17452473, 17452481
General Physics and Astronomy
Abstract
A combination of photoemission and scanning tunnelling spectroscopy measurements provide compelling evidence that single layers of 1T'-WTe2 are a class of quantum spin Hall insulator. A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling1,2. By investigating the electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large bandgap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).
Found 
Found 

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