Nature Nanotechnology, volume 17, issue 8, pages 823-828
Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers
Narita Hideki
1
,
ISHIZUKA Jun
2
,
Kawarazaki Ryo
1
,
Kan Daisuke
1, 3
,
Shiota Y.
1, 3
,
Moriyama T.
1, 3
,
Shimakawa Yuichi
1, 3
,
Ognev Alexey V
4
,
Yanase Youichi
5, 6
,
OHNO Toshimi
1, 3, 4, 7
1
Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, Japan
|
3
Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Uji, Japan
|
5
Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Japan
|
6
Institute for Molecular Science, Okazaki, JAPAN
|
7
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
|
Publication type: Journal Article
Publication date: 2022-06-30
Journal:
Nature Nanotechnology
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 38.3
ISSN: 17483387, 17483395
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
General Materials Science
Electrical and Electronic Engineering
Bioengineering
Biomedical Engineering
Abstract
The diode effect is fundamental to electronic devices and is widely used in rectifiers and a.c.–d.c. converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE)1–8, which relies on broken inversion symmetry in a superconductor, may mitigate this obstacle: in one direction, a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE in Nb/V/Ta superlattices with a polar structure1,2, in superconducting devices with asymmetric patterning of pinning centres9 or in superconductor/ferromagnet hybrid devices with induced vortices10,11. The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe2/Nb3Br8/NbSe2 junction; it originates from asymmetric Josephson tunnelling that is induced by the Nb3Br8 barrier and the associated NbSe2/Nb3Br8 interfaces12. Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The magnetic layers provide the necessary symmetry breaking, and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures13–18, such as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions19–22. Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption. Superconducting diodes, which can operate without dissipation losses at low temperature, usually require a magnetic field to function. A well-designed multilayer device now shows a reversible, non-volatile superconducting diode effect.
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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JETP Letters
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1 publication, 2.22%
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2D Materials
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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1 publication, 2.22%
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2
4
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8
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Citations by publishers
5
10
15
20
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10 publications, 22.22%
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5 publications, 11.11%
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IOP Publishing
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IOP Publishing
2 publications, 4.44%
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Pleiades Publishing
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Pleiades Publishing
2 publications, 4.44%
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American Institute of Physics (AIP)
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American Institute of Physics (AIP)
1 publication, 2.22%
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Wiley
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Wiley
1 publication, 2.22%
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IEEE
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IEEE
1 publication, 2.22%
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Chinese Physical Society
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Chinese Physical Society
1 publication, 2.22%
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Royal Society of Chemistry (RSC)
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Royal Society of Chemistry (RSC)
1 publication, 2.22%
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Annual Reviews
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Annual Reviews
1 publication, 2.22%
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5
10
15
20
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Narita H. et al. Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers // Nature Nanotechnology. 2022. Vol. 17. No. 8. pp. 823-828.
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Narita H., ISHIZUKA J., Kawarazaki R., Kan D., Shiota Y., Moriyama T., Shimakawa Y., Ognev A. V., Samardak A. S., Yanase Y., OHNO T. Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers // Nature Nanotechnology. 2022. Vol. 17. No. 8. pp. 823-828.
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TY - JOUR
DO - 10.1038/s41565-022-01159-4
UR - https://doi.org/10.1038%2Fs41565-022-01159-4
TI - Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers
T2 - Nature Nanotechnology
AU - Narita, Hideki
AU - ISHIZUKA, Jun
AU - Kawarazaki, Ryo
AU - Kan, Daisuke
AU - Shiota, Y.
AU - Moriyama, T.
AU - Shimakawa, Yuichi
AU - Ognev, Alexey V
AU - Samardak, Alexander S
AU - Yanase, Youichi
AU - OHNO, Toshimi
PY - 2022
DA - 2022/06/30 00:00:00
PB - Springer Nature
SP - 823-828
IS - 8
VL - 17
SN - 1748-3387
SN - 1748-3395
ER -
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@article{2022_Narita,
author = {Hideki Narita and Jun ISHIZUKA and Ryo Kawarazaki and Daisuke Kan and Y. Shiota and T. Moriyama and Yuichi Shimakawa and Alexey V Ognev and Alexander S Samardak and Youichi Yanase and Toshimi OHNO},
title = {Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers},
journal = {Nature Nanotechnology},
year = {2022},
volume = {17},
publisher = {Springer Nature},
month = {jun},
url = {https://doi.org/10.1038%2Fs41565-022-01159-4},
number = {8},
pages = {823--828},
doi = {10.1038/s41565-022-01159-4}
}
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Narita, Hideki, et al. “Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers.” Nature Nanotechnology, vol. 17, no. 8, Jun. 2022, pp. 823-828. https://doi.org/10.1038%2Fs41565-022-01159-4.