Spin current from sub-terahertz-generated antiferromagnetic magnons

Spin dynamics in antiferromagnets has much shorter timescales than in ferromagnets, offering attractive properties for potential applications in ultrafast devices 1 – 3 . However, spin-current generation via antiferromagnetic resonance and simultaneous electrical detection by the inverse spin Hall effect in heavy metals have not yet been explicitly demonstrated 4 – 6 . Here we report sub-terahertz spin pumping in heterostructures of a uniaxial antiferromagnetic Cr 2 O 3 crystal and a heavy metal (Pt or Ta in its β phase). At 0.240 terahertz, the antiferromagnetic resonance in Cr 2 O 3 occurs at about 2.7 tesla, which excites only right-handed magnons. In the spin-canting state, another resonance occurs at 10.5 tesla from the precession of induced magnetic moments. Both resonances generate pure spin currents in the heterostructures, which are detected by the heavy metal as peaks or dips in the open-circuit voltage. The pure-spin-current nature of the electrically detected signals is unambiguously confirmed by the reversal of the voltage polarity observed under two conditions: when switching the detector metal from Pt to Ta, reversing the sign of the spin Hall angle 7 – 9 , and when flipping the magnetic-field direction, reversing the magnon chirality 4 , 5 . The temperature dependence of the electrical signals at both resonances suggests that the spin current contains both coherent and incoherent magnon contributions, which is further confirmed by measurements of the spin Seebeck effect and is well described by a phenomenological theory. These findings reveal the unique characteristics of magnon excitations in antiferromagnets and their distinctive roles in spin–charge conversion in the high-frequency regime. Pure spin currents are simultaneously generated and detected electrically through sub-terahertz magnons in the antiferromagnetic insulator Cr 2 O 3 , demonstrating the potential of magnon excitations in antiferromagnets for high-frequency spintronic devices.