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Scientific Reports, volume 12, issue 1, publication number 6321

ITO film stack engineering for low-loss silicon optical modulators

Lotkov Evgeniy S ^{1, 2}

Baburin Aleksandr S ^{1, 2}

Ryzhikov Ilya A. ^{1, 3}

Sorokina Olga S ^{1, 2}

Ivanov Anton I ^{1, 2}

Zverev Alexander V ^{1, 2}

Ryzhkov Vitaly V ¹

Bykov Igor V ³

Baryshev Alexander V ²

Panfilov Yuri V ¹

Rodionov Ilya A ^{1, 2}

Hide authors affiliations Show authors affiliations: 3 affiliations

FMN Laboratory, Bauman Moscow State Technical University, Moscow, Russia |

Dukhov Automatics Research Institute, (VNIIA), Moscow, Russia |

Institute for Theoretical and Applied Electromagnetics RAS, Moscow, Russia |

Publication type: Journal Article

Publication date: 2022-04-15

Springer Nature

Journal: Scientific Reports

Quartile SCImago

Quartile WOS

Impact factor: 4.6

ISSN: 20452322

DOI: 10.1038/s41598-022-09973-5

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PubMed ID: 35428848

Multidisciplinary

Abstract

The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (N_c = 3.7·10²⁰ cm⁻³) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 10²⁰ cm⁻³). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.

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American Institute of Physics (AIP)	American Institute of Physics (AIP), 2, 15.38% American Institute of Physics (AIP) 2 publications, 15.38%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 7.69% American Chemical Society (ACS) 1 publication, 7.69%
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Lotkov E. S. et al. ITO film stack engineering for low-loss silicon optical modulators // Scientific Reports. 2022. Vol. 12. No. 1. 6321

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Lotkov E. S., Baburin A. S., Ryzhikov I. A., Sorokina O. S., Ivanov A. I., Zverev A. V., Ryzhkov V. V., Bykov I. V., Baryshev A. V., Panfilov Y. V., Rodionov I. A. ITO film stack engineering for low-loss silicon optical modulators // Scientific Reports. 2022. Vol. 12. No. 1. 6321

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RIS Copy

TY - JOUR

DO - 10.1038/s41598-022-09973-5

UR - https://doi.org/10.1038%2Fs41598-022-09973-5

TI - ITO film stack engineering for low-loss silicon optical modulators

T2 - Scientific Reports

AU - Ryzhikov, Ilya A.

AU - Sorokina, Olga S

AU - Ivanov, Anton I

AU - Zverev, Alexander V

AU - Ryzhkov, Vitaly V

AU - Bykov, Igor V

AU - Baryshev, Alexander V

AU - Panfilov, Yuri V

AU - Lotkov, Evgeniy S

AU - Baburin, Aleksandr S

AU - Rodionov, Ilya A

PY - 2022

DA - 2022/04/15 00:00:00

PB - Springer Nature

IS - 1

VL - 12

PMID - 35428848

SN - 2045-2322

ER -

BibTex

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BibTex Copy

@article{2022_Lotkov,

author = {Ilya A. Ryzhikov and Olga S Sorokina and Anton I Ivanov and Alexander V Zverev and Vitaly V Ryzhkov and Igor V Bykov and Alexander V Baryshev and Yuri V Panfilov and Evgeniy S Lotkov and Aleksandr S Baburin and Ilya A Rodionov},

title = {ITO film stack engineering for low-loss silicon optical modulators},

journal = {Scientific Reports},

year = {2022},

volume = {12},

publisher = {Springer Nature},

month = {apr},

url = {https://doi.org/10.1038%2Fs41598-022-09973-5},

number = {1},

doi = {10.1038/s41598-022-09973-5}

}

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Publisher

Springer Nature

Journal

Scientific Reports

Quartile SCImago

Quartile WOS

Impact factor

4.6

ISSN

20452322 (Print)

Labs

Optical Laboratory

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