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Scientific Reports

, volume 13 , issue 1 , publication number 4882

Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence

D. M. Esteves ^{1, 2}

A L Rodrigues ³

L.C Alves ^{3, 4}

E. ALVES ^{2, 4}

M. I. DIAS ^{3, 4}

Z. Jia ⁵

W. Mu ⁵

K. LORENZ ^{1, 2, 4}

M. Peres ^{1, 2, 4}

Hide authors affiliations Show authors affiliations: 5 affiliations

INESC MN, Lisbon, Portugal |

IPFN, Instituto Superior Técnico, University of Lisbon, Lisbon, Portugal |

C2TN, Instituto Superior Técnico, University of Lisbon, Bobadela, Portugal |

⁴

DECN, Instituto Superior Técnico, University of Lisbon, Bobadela, Portugal |

⁵

State Key Laboratory of Crystal materials, Shandong University, Jinan, China |

Publication type: Journal Article

Publication date: 2023-03-25

Springer Nature

Scientific Reports

scimago Q1

wos Q1

SJR: 0.874

CiteScore: 6.7

Impact factor: 3.9

ISSN: 20452322

DOI: 10.1038/s41598-023-31824-0

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PubMed ID: 36966173

Multidisciplinary

Abstract

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-Ga₂O₃ using both protons and helium ions, showing a strong enhancement of the Cr³⁺ luminescence upon ion irradiation. Theoretical modelling of the IBIL intensity curves as a function of the fluence allowed estimating the effective cross-sections associated with the defect-induced IBIL enhancement and quenching processes. The results suggest that sensitizing the Cr³⁺ luminescence is more efficient for H⁺ than for He⁺ irradiation. Thermoluminescence (TL) studies were performed in the pristine sample, with no TL signal being observed in the spectral region corresponding to the Cr³⁺ emission. In agreement with the IBIL study, upon ion irradiation (with either protons or helium ions), this TL emission is activated. Moreover, it can be quenched by annealing at 923 K for 10 s, thus revealing the role played by the defects induced by the irradiation. These results show that the irradiation-induced defects play a major role in the activation of the Cr³⁺ luminescence, a fact that can be exploited for radiation sensing and dosimetry.

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Esteves D. M. et al. Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence // Scientific Reports. 2023. Vol. 13. No. 1. 4882

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Esteves D. M., Rodrigues A. L., Alves L., ALVES E., DIAS M. I., Jia Z., Mu W., LORENZ K., Peres M. Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence // Scientific Reports. 2023. Vol. 13. No. 1. 4882

RIS |

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RIS Copy

TY - JOUR

DO - 10.1038/s41598-023-31824-0

UR - https://doi.org/10.1038/s41598-023-31824-0

TI - Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence

T2 - Scientific Reports

AU - Esteves, D. M.

AU - Rodrigues, A L

AU - Alves, L.C

AU - ALVES, E.

AU - DIAS, M. I.

AU - Jia, Z.

AU - Mu, W.

AU - LORENZ, K.

AU - Peres, M.

PY - 2023

DA - 2023/03/25

PB - Springer Nature

IS - 1

VL - 13

PMID - 36966173

SN - 2045-2322

ER -

BibTex

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BibTex (up to 50 authors) Copy

@article{2023_Esteves,

author = {D. M. Esteves and A L Rodrigues and L.C Alves and E. ALVES and M. I. DIAS and Z. Jia and W. Mu and K. LORENZ and M. Peres},

title = {Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence},

journal = {Scientific Reports},

year = {2023},

volume = {13},

publisher = {Springer Nature},

month = {mar},

url = {https://doi.org/10.1038/s41598-023-31824-0},

number = {1},

pages = {4882},

doi = {10.1038/s41598-023-31824-0}

}

Publisher

Springer Nature

Journal

Scientific Reports

scimago Q1

wos Q1

SJR

0.874

CiteScore

6.7

Impact factor

3.9

ISSN

20452322 (Print, Electronic)