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Nature Communications, volume 6, issue 1, publication number 6293

Exploring atomic defects in molybdenum disulphide monolayers

Hong Jinhua 1
Hu Zhixin 2
Probert Matt 3
Li Kun 4
Lv Danhui 1
YANG XINAN 5
Gu Lin 5
Mao Nannan 6, 7
Feng Qingliang 6
Xie Liming 6
Zhang Jin 7
Wu Dianzhong 8
Zhang Zhiyong 8
Jin Chuanhong 1
Ji Wei 2, 9
Zhang Xixiang 4
Yuan Jun 1, 3
Zhang Ze 1
3
 
Department of Physics, University of York, Heslington, York YO10 5DD, UK,
5
 
Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter, Beijing, China
6
 
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, China
Publication typeJournal Article
Publication date2015-02-19
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor16.6
ISSN20411723
PubMed ID:  25695374
General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy
Abstract
Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. Imperfections can greatly alter a material’s properties. Here, the authors investigate the influence of point defects on the electronic structure, charge-carrier mobility and optical absorption of molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition.

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GOST Copy
Hong J. et al. Exploring atomic defects in molybdenum disulphide monolayers // Nature Communications. 2015. Vol. 6. No. 1. 6293
GOST all authors (up to 50) Copy
Hong J., Hu Z., Probert M., Li K., Lv D., YANG X., Gu L., Mao N., Feng Q., Xie L., Zhang J., Wu D., Zhang Z., Jin C., Ji W., Zhang X., Yuan J., Zhang Z. Exploring atomic defects in molybdenum disulphide monolayers // Nature Communications. 2015. Vol. 6. No. 1. 6293
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RIS Copy
TY - JOUR
DO - 10.1038/ncomms7293
UR - https://doi.org/10.1038%2Fncomms7293
TI - Exploring atomic defects in molybdenum disulphide monolayers
T2 - Nature Communications
AU - Hong, Jinhua
AU - Hu, Zhixin
AU - Probert, Matt
AU - Li, Kun
AU - Lv, Danhui
AU - YANG, XINAN
AU - Gu, Lin
AU - Mao, Nannan
AU - Feng, Qingliang
AU - Xie, Liming
AU - Zhang, Jin
AU - Wu, Dianzhong
AU - Zhang, Zhiyong
AU - Jin, Chuanhong
AU - Ji, Wei
AU - Zhang, Xixiang
AU - Yuan, Jun
AU - Zhang, Ze
PY - 2015
DA - 2015/02/19 00:00:00
PB - Springer Nature
IS - 1
VL - 6
PMID - 25695374
SN - 2041-1723
ER -
BibTex
Cite this
BibTex Copy
@article{2015_Hong,
author = {Jinhua Hong and Zhixin Hu and Matt Probert and Kun Li and Danhui Lv and XINAN YANG and Lin Gu and Nannan Mao and Qingliang Feng and Liming Xie and Jin Zhang and Dianzhong Wu and Zhiyong Zhang and Chuanhong Jin and Wei Ji and Xixiang Zhang and Jun Yuan and Ze Zhang},
title = {Exploring atomic defects in molybdenum disulphide monolayers},
journal = {Nature Communications},
year = {2015},
volume = {6},
publisher = {Springer Nature},
month = {feb},
url = {https://doi.org/10.1038%2Fncomms7293},
number = {1},
doi = {10.1038/ncomms7293}
}
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