Nature Nanotechnology, volume 7, issue 6, pages 369-373

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Liangfeng Sun 1, 2
Joshua J Choi 1, 3
David Stachnik 1
Adam C. Bartnik 1
Byung Ryool Hyun 1
George G Malliaras 4, 5
Tobias Hanrath 3
Frank W Wise 1
2
 
Present address: Department of Physics and Astronomy, Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, USA,
5
 
Present address: Department of Bioelectronics, Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, Gardanne, France,
Publication typeJournal Article
Publication date2012-05-06
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor38.3
ISSN17483387, 17483395
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
General Materials Science
Electrical and Electronic Engineering
Bioengineering
Biomedical Engineering
Abstract
Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

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GOST |
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Sun L. et al. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control. // Nature Nanotechnology. 2012. Vol. 7. No. 6. pp. 369-373.
GOST all authors (up to 50) Copy
Sun L., Choi J. J., Stachnik D., Bartnik A. C., Hyun B. R., Malliaras G. G., Hanrath T., Wise F. W. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control. // Nature Nanotechnology. 2012. Vol. 7. No. 6. pp. 369-373.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1038/nnano.2012.63
UR - https://doi.org/10.1038/nnano.2012.63
TI - Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.
T2 - Nature Nanotechnology
AU - Sun, Liangfeng
AU - Choi, Joshua J
AU - Stachnik, David
AU - Bartnik, Adam C.
AU - Hyun, Byung Ryool
AU - Malliaras, George G
AU - Hanrath, Tobias
AU - Wise, Frank W
PY - 2012
DA - 2012/05/06 00:00:00
PB - Springer Nature
SP - 369-373
IS - 6
VL - 7
SN - 1748-3387
SN - 1748-3395
ER -
BibTex |
Cite this
BibTex Copy
@article{2012_Sun,
author = {Liangfeng Sun and Joshua J Choi and David Stachnik and Adam C. Bartnik and Byung Ryool Hyun and George G Malliaras and Tobias Hanrath and Frank W Wise},
title = {Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.},
journal = {Nature Nanotechnology},
year = {2012},
volume = {7},
publisher = {Springer Nature},
month = {may},
url = {https://doi.org/10.1038/nnano.2012.63},
number = {6},
pages = {369--373},
doi = {10.1038/nnano.2012.63}
}
MLA
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MLA Copy
Sun, Liangfeng, et al. “Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control..” Nature Nanotechnology, vol. 7, no. 6, May. 2012, pp. 369-373. https://doi.org/10.1038/nnano.2012.63.
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