Open Access
npj Computational Materials, volume 8, issue 1, publication number 52
The ferroelectric field-effect transistor with negative capacitance
2
Terra Quantum AG, Rorschach, Switzerland
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Publication type: Journal Article
Publication date: 2022-03-28
Journal:
npj Computational Materials
scimago Q1
wos Q1
SJR: 2.835
CiteScore: 16.3
Impact factor: 11.9
ISSN: 20573960
Computer Science Applications
General Materials Science
Mechanics of Materials
Modeling and Simulation
Abstract
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.
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Kobayashi M.
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Metrics
45
Total citations:
45
Citations from 2024:
27
(60%)