Open Access
Open access
npj Computational Materials, volume 8, issue 1, publication number 52

The ferroelectric field-effect transistor with negative capacitance

Publication typeJournal Article
Publication date2022-03-28
scimago Q1
wos Q1
SJR2.835
CiteScore16.3
Impact factor11.9
ISSN20573960
Computer Science Applications
General Materials Science
Mechanics of Materials
Modeling and Simulation
Abstract
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.
Pavlenko M.A., Tikhonov Y.A., Razumnaya A.G., Vinokur V.M., Lukyanchuk I.A.
Nanomaterials scimago Q1 wos Q2 Open Access  
2021-12-28 PDF Abstract  
It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO3/PbTiO3/SrTiO3 heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.
Mikolajick T., Slesazeck S., Mulaosmanovic H., Park M.H., Fichtner S., Lomenzo P.D., Hoffmann M., Schroeder U.
Journal of Applied Physics scimago Q2 wos Q3  
2021-03-11 Abstract  
Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.
Hoffmann M., Slesazeck S., Mikolajick T.
APL Materials scimago Q1 wos Q2 Open Access  
2021-02-01 PDF Abstract  
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce the power dissipation of electronics beyond fundamental limits. The discovery of ferroelectricity and negative capacitance in the widely used class of HfO2-based materials has since sparked large research efforts to utilize these effects in ultra-low power transistors. While significant progress has been made in the basic understanding of ferroelectric negative capacitance in recent years, the development of practical devices has seen limited success so far. Here, we present a unique view of the field of negative capacitance electronics from the ferroelectric materials perspective. Starting from the basic principles of ferroelectric negative capacitance, we discuss the desirable characteristics of a negative capacitance material, concluding that HfO2-based ferroelectrics are currently most promising for applications in electronics. However, we emphasize that material non-idealities can complicate and in some cases even inhibit the design and fabrication of practical negative capacitance devices using HfO2-based ferroelectrics. Finally, we review the recent progress on experimental devices and give an outlook on the future direction of the field. In particular, further investigations of the microscopic structure of HfO2-based ferroelectrics are needed to provide an insight into the origin of negative capacitance in this material system and to enable predictive device design.
Das S., Hong Z., Stoica V.A., Gonçalves M.A., Shao Y.T., Parsonnet E., Marksz E.J., Saremi S., McCarter M.R., Reynoso A., Long C.J., Hagerstrom A.M., Meyers D., Ravi V., Prasad B., et. al.
Nature Materials scimago Q1 wos Q1  
2020-10-12 Abstract  
Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO3)n/(SrTiO3)n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO3 and PbTiO3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field. Polar skyrmions are topologically protected structures that can exist in (PbTiO3)n/(SrTiO3)n superlattices. Here, it is shown that they have negative permittivity at the surface, and that they can undergo a reversible phase transition with large dielectric tunability under an electric field.
Nature Electronics scimago Q1 wos Q1  
2020-09-18 Abstract  
Negative capacitance field-effect transistors have been proposed as a route to low-power electronics, but a lack of fundamental understanding limits progress.
Hoffmann M., Slesazeck S., Schroeder U., Mikolajick T.
Nature Electronics scimago Q1 wos Q1  
2020-09-10 Abstract  
Progress towards low-power electronics based on negative capacitance has been slow. For the field to develop, the gap between fundamental research on ferroelectric materials and the engineering of practical devices needs to be bridged.
Oh J., Venters C.C., Di C., Pinto A.M., Wan L., Younis I., Cai Z., Arai C., So B.R., Duan J., Dreyfuss G.
Nature Communications scimago Q1 wos Q1 Open Access  
2020-01-07 PDF Abstract  
Stimulated cells and cancer cells have widespread shortening of mRNA 3’-untranslated regions (3’UTRs) and switches to shorter mRNA isoforms due to usage of more proximal polyadenylation signals (PASs) in introns and last exons. U1 snRNP (U1), vertebrates’ most abundant non-coding (spliceosomal) small nuclear RNA, silences proximal PASs and its inhibition with antisense morpholino oligonucleotides (U1 AMO) triggers widespread premature transcription termination and mRNA shortening. Here we show that low U1 AMO doses increase cancer cells’ migration and invasion in vitro by up to 500%, whereas U1 over-expression has the opposite effect. In addition to 3’UTR length, numerous transcriptome changes that could contribute to this phenotype are observed, including alternative splicing, and mRNA expression levels of proto-oncogenes and tumor suppressors. These findings reveal an unexpected role for U1 homeostasis (available U1 relative to transcription) in oncogenic and activated cell states, and suggest U1 as a potential target for their modulation. U1 snRNP is a key regulator of mRNA biogenesis through its roles in splicing, and transcription and 3’-end processing. Here the authors show a tumor suppressor-like function of U1 snRNP using in vitro cell migration/invasion assays and transcriptome profiling.
Bacharach J., Ullah M.S., Fouad E.
2019-08-01 Abstract  
Continuous scaling of transistor dimensions to satisfy the increasing demands for higher performance and energy efficiency over the last 50 years is leading the conventional field effect transistors (FETs) to their fundamental material and physical limits. Further improvement of transistor operation and reliability will require new technology and device structure like negative capacitance based transistor. Besides, the roadmap for silicon device technology is approaching the point, where radical material alternatives must be introduced. Negative capacitance based conventional transistor that is often viewed as an adverse effect of short channel lengths in the conventional metal oxide field effect transistors (MOSFETs) has emerged as a promising current injection mechanism to allow the reduction of operating voltage beyond the capabilities of the MOSFET technology. In this paper includes a review summarizing the progresses in the development of the negative capacitance technology, and the experimentally observed performances of different transistors.
Íñiguez J., Zubko P., Luk’yanchuk I., Cano A.
Nature Reviews Materials scimago Q1 wos Q1  
2019-03-14 Abstract  
The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably designed heterostructure, ferroelectrics display such an NC effect, and various ferroelectric-based microelectronic and nanoelectronic devices have been developed, showing improved performance attributed to NC. However, the exact physical nature of the NC response and direct experimental evidence remain elusive or controversial thus far. In this Review, we discuss the physical mechanisms responsible for ferroelectric NC, tackling static and transient NC responses. We examine ferroelectric responses to voltage and charge, as well as ferroelectric switching, and discuss proof-of-concept experiments and possibilities for device implementation. Finally, we highlight different approaches for the optimization of the intrinsic NC response to maximize voltage amplification. Ferroelectrics-based materials can display a negative capacitance (NC) effect, providing an opportunity to implement NC in electronic circuits to improve their performance. In this Review, the authors discuss static and transient NC responses in ferroelectrics and highlight proof-of-concept experiments and possibilities for device implementation.
Alam M.A., Si M., Ye P.D.
Applied Physics Letters scimago Q1 wos Q2  
2019-03-04 Abstract  
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance field effect transistor (NC-FET). Although hundreds of papers have been published, the validity of quasi-static NC and the frequency-reliability limits of NC-FET are still being debated. The concept of NC - if conclusively demonstrated - will have broad impacts on device physics and technology development. Here, the authors provide a critical review of recent progress on NC-FETs research and some starting points for a coherent discussion.
Luk’yanchuk I., Tikhonov Y., Sené A., Razumnaya A., Vinokur V.M.
Communications Physics scimago Q1 wos Q1 Open Access  
2019-02-26 PDF Abstract  
A pressing quest for overcoming Boltzmann tyranny in low-power nanoscale electronics ignited an extensive search for the devices possessing the negative circuit constants. The emergent concept of the ferroelectric-based negative capacitance triggered then the explosive activity in the field. However, most of the research addressed transient negative capacitance, leaving the basic question of the existence of the steady-state negative capacitance unresolved. Here, we show that the ferroelectric nanodot capacitor hosts a stable two-domain state realizing the static reversible negative capacitance device thus opening routes for the extensive use of the negative capacitance in domain wall-based nanoelectronics. Negative capacitance describes a phenomenon where the increase in the charge of the capacitor results in decreasing its voltage. The authors put forth a ferroelectric nanodot harboring two polarization domains which stabilize static reversible negative capacitance.
Hoffmann M., Fengler F.P., Herzig M., Mittmann T., Max B., Schroeder U., Negrea R., Lucian P., Slesazeck S., Mikolajick T.
Nature scimago Q1 wos Q1  
2019-01-11 Abstract  
The properties of ferroelectric materials, which were discovered almost a century ago1, have led to a huge range of applications, such as digital information storage2, pyroelectric energy conversion3 and neuromorphic computing4,5. Recently, it was shown that ferroelectrics can have negative capacitance6–11, which could improve the energy efficiency of conventional electronics beyond fundamental limits12–14. In Landau–Ginzburg–Devonshire theory15–17, this negative capacitance is directly related to the double-well shape of the ferroelectric polarization–energy landscape, which was thought for more than 70 years to be inaccessible to experiments18. Here we report electrical measurements of the intrinsic double-well energy landscape in a thin layer of ferroelectric Hf0.5Zr0.5O2. To achieve this, we integrated the ferroelectric into a heterostructure capacitor with a second dielectric layer to prevent immediate screening of polarization charges during switching. These results show that negative capacitance has its origin in the energy barrier in a double-well landscape. Furthermore, we demonstrate that ferroelectric negative capacitance can be fast and hysteresis-free, which is important for prospective applications19. In addition, the Hf0.5Zr0.5O2 used in this work is currently the most industry-relevant ferroelectric material, because both HfO2 and ZrO2 thin films are already used in everyday electronics20. This could lead to fast adoption of negative capacitance effects in future products with markedly improved energy efficiency. A ferroelectric thin film that behaves as a single domain is found to exhibit both negative capacitance and the predicted double-well polarization–energy relationship.
Yadav A.K., Nguyen K.X., Hong Z., García-Fernández P., Aguado-Puente P., Nelson C.T., Das S., Prasad B., Kwon D., Cheema S., Khan A.I., Hu C., Íñiguez J., Junquera J., Chen L., et. al.
Nature scimago Q1 wos Q1  
2019-01-11 Abstract  
Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1–14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation. These manifestations demonstrate possible uses of steady-state negative capacitance—for example, enhancing the capacitance of a ferroelectric–dielectric heterostructure4,7,14 or improving the subthreshold swing of a transistor8–12. Yet they constitute only indirect measurements of the local state of negative capacitance in which the ferroelectric resides. Spatial mapping of this phenomenon would help its understanding at a microscopic scale and also help to achieve optimal design of devices with potential technological applications. Here we demonstrate a direct measurement of steady-state negative capacitance in a ferroelectric–dielectric heterostructure. We use electron microscopy complemented by phase-field and first-principles-based (second-principles) simulations in SrTiO3/PbTiO3 superlattices to directly determine, with atomic resolution, the local regions in the ferroelectric material where a state of negative capacitance is stabilized. Simultaneous vector mapping of atomic displacements (related to a complex pattern in the polarization field), in conjunction with reconstruction of the local electric field, identify the negative capacitance regions as those with higher energy density and larger polarizability: the domain walls where the polarization is suppressed. Imaging steady-state negative capacitance in SrTiO3/PbTiO3 superlattices with atomic resolution provides solid microscale support for this phenomenon.
Kobayashi M.
Applied Physics Express scimago Q2 wos Q3 Open Access  
2018-10-22 Abstract  
In today's highly information-oriented society, a continuously increasing number of computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in cloud to sensor node devices in edge. Under the constraint of power consumption, energy-efficient computing is necessary to enable low-power operation and implement emerging algorithms such as machine learning. A steep-subthreshold-slope (SS) transistor can be a next-generation device technology platform for highly energy-efficient computing. Among several types of steep-SS transistors, the negative-capacitance field-effect transistor (NCFET) has recently become one of the most promising candidates in terms of on-current, process integration, and cost, coincident with the discovery of ferroelectric HfO2. In this review paper, the concept and recent research studies on NCFET are reviewed. Technical challenges and future prospects are discussed.
Morozovska A.N., Cherifi-Hertel S., Eliseev E.A., Khist V.V., Hertel R., Evans D.R.
Journal of Applied Physics scimago Q2 wos Q3  
2025-07-16 Abstract  
This theoretical review examines the conditions that give rise to the formation of flexo-sensitive chiral polar structures in thin films and core–shell ferroelectric nanoparticles. It also analyzes possible mechanisms by which the flexoelectric effect impacts the polarization structure in core–shell ferroelectric nanoparticles. Special attention is given to the role of the anisotropic flexoelectric effect in forming a unique type of polarization states with distinct chiral properties, referred to as “flexons.” In the first half of the review, we study the influence of the flexoelectric coupling on the polarity, chirality, and branching of metastable labyrinthine domain structures in uniaxial ferroelectric core–shell nanoparticles. We reveal that the transition from sinuous branched domain stripes to spiral-like domains occurs gradually as the flexoelectric coupling strength is increased. Our findings indicate that the joint action of the flexoelectric effect and chemical strains, termed as “flexo-chemical” coupling, can significantly influence the effective Curie temperature, polarization distribution, domain morphology, and chirality in multiaxial ferroelectric core–shell nanoparticles. Furthermore, we demonstrate that the combination of flexo-chemical coupling and screening effects leads to the appearance and stabilization of a chiral polarization morphology in nanoflakes of van der Waals ferrielectrics covered by a shell of ionic-electronic screening charge. In the second half of the review, we discuss several advanced applications of flexo-sensitive chiral polar structures in core–shell ferroelectric nanoparticles for nanoelectronics elements and cryptography. We underline the possibilities of the flexoelectric control of multiple-degenerated labyrinthine states, which may correspond to a differential negative capacitance (NC) state stabilized in the uniaxial ferroelectric core by the presence of a screening shell. We show that the paraelectric-like state of van der Waals ferrielectric nanoflakes covered by a shell of ionic-electronic screening charge exhibits a pronounced NC effect over a relatively wide range of nanoflake thicknesses, flexo-chemical strains, and surface charge densities.
Sett S., Paul T., Ghosh A.
2025-07-01 Abstract  
The evolution of ferroelectric devices is driven by advancements in materials science, device physics, and engineering. However, depolarization fields and interfacial disorder limit the scaling performance, endurance, and reliability of conventional thin-film ferroelectrics. van der Waals (vdW) ferroelectric materials exhibiting novel properties at the atomic scale are interesting candidates for mitigating the aforementioned issues, thereby allowing for improved ferroelectric device performance. In this review, we discuss the unconventional origins of both spontaneous and artificial polarization, along with their associated switching mechanisms, in polar and nonpolar vdW ferroelectric crystals and heterostructures. Recent device architectures utilizing vdW ferroelectricity are reviewed with a specific focus on emerging memory, steep-slope logic, and in-memory computing applications. We conclude with an overview of the opportunities and challenges for vdW ferroelectrics related to scalability, endurance, device integration, and growth, highlighting recent advances toward manifesting next-generation electronics.
Qin L., Wang L.
Nano-Micro Letters scimago Q1 wos Q1 Open Access  
2025-05-13 PDF Abstract  
Abstract The relentless down-scaling of electronics grands the modern integrated circuits (ICs) with the high speed, low power dissipation and low cost, fulfilling diverse demands of modern life. Whereas, with the semiconductor industry entering into sub-10 nm technology nodes, degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law’s life. Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm, which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects. Nowadays, the emergence of two-dimensional (2D) materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC, mainly ascribed to their ultimately atomic thickness, capability to maintain carrier mobility with thickness thinning down, dangling-bonds free surface, wide bandgaps tunability and feasibility to constitute diverse heterostructures. Blossoming breakthroughs in discrete electronic device, such as contact engineering, dielectric integration and vigorous channel-length scaling, or large circuits arrays, as boosted yields, improved variations and full-functioned processor fabrication, based on 2D materials have been achieved nowadays, facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.
Liu J., Han W., Hong E., Deng M., Li Z., Wu L., Fang X.
Advanced Functional Materials scimago Q1 wos Q1  
2025-03-21 Abstract  
AbstractNowadays, miniaturization, low power consumption and multi‐scenario applications are urgent requirements for the development of the next generation of vision architecture. Eliminating the interface of image sensing, memory and digital processing units and folding the entire signal chain into one device has become a promising strategy but remains challenging. Here, a 2D fully ferroelectric‐gated negative capacitance (NC) phototransistor is demonstrated to enable the integration of in‐memory sensing and logic processing. Attributed to the combined action of ferroelectric NC effect and strong photogating effect, the prototype tungsten disulfide (WS2) NC phototransistor exhibits a small subthreshold swing (SS) of 41.7 mV dec−1 and high photodetectivity of 2.3 × 1013 Jones. The quick switching of conductance states illustrates that such a device is suitable for ultralow‐power nonvolatile memory with high program/erase ratio (>104), long retention time (>104 s), stable cyclic endurance (>300 cycles) and ultralow programming energy (1.41 pJ/bit) and erasing energy (0.945 pJ/bit). The work demonstrates ferroelectric‐optoelectronic engineering in 2D material to integrate sensing, memory, and logic all‐in‐one device, providing a promising implementation of vision system with low power consumption, low latency, and low system complexity.
Mousavi Khaleghi S.S., Wei J., Liu Y., Wang Y., Fan Z., Li K., Chen J., Kudrawiec R., Yang R., Crozier K.B., Dan Y.
ACS Nano scimago Q1 wos Q1  
2025-03-21
Lukyanchuk I.A., Razumnaya A.G., Kondovych S., Tikhonov Y.A., Khesin B., Vinokur V.M.
Physics Reports scimago Q1 wos Q1  
2025-03-01
Eliseev E.A., Kalinin S.V., Morozovska A.N.
Journal of Applied Physics scimago Q2 wos Q3  
2025-01-15 Abstract  
Unique polar properties of nanoscale hafnia-zirconia oxides (HfxZr1−xO2) are of great interest for condensed matter physics, nanophysics, and advanced applications. These properties are connected (at least partially) to the ionic–electronic and electrochemical phenomena at the surface, interfaces, and/or internal grain boundaries. Here, we calculated the phase diagrams, dielectric permittivity, spontaneous polar, and antipolar ordering, as well as the domain structure morphology in HfxZr1−xO2 nanoparticles covered by ionic–electronic charge originating from surface electrochemical adsorption. We revealed that the ferro-ionic coupling supports the polar long-range order in nanoscale HfxZr1−xO2, induces, and/or enlarges the stability region of the labyrinthine domains toward smaller sizes and smaller environmental dielectric constant at low concentrations of the surface ions. The ferro-ionic coupling causes the transition to the single-domain ferro-ionic state at high concentrations of the surface ions. We predict that the labyrinthine domain states, being multiple-degenerated, may significantly affect the emergence of the negative differential capacitance state in the nanograined/nanocrystalline HfxZr1−xO2 films.
Gupta N.N., Tripathi S.L., Saxena S.
Engineering Research Express scimago Q2 wos Q2  
2025-01-07 Abstract  
Abstract The major focus on any transistor-level design is to minimize the effects on switching speed and power consumption at smaller dimensions, which are crucial in VLSI design for low power applications. In this work, a double gate MOSFET design is proposed with p+ pocket in the channel region at 10 nm technology node. Further a ferroelectric material HfO2FE is also introduced between gate and oxide layer resulting a negative capacitance double gate MOSFET (NCDGMOSFET). Ferroelectric material shows negative capacitance that limits the subthreshold slope with dimension scaling. Increased gate control and high switching speed in NCDGMOSFET with lightly doped n-channel, is a promising transistor option for low-power high performance IC design. The proposed device design is characterised with different pocket dimensions for gate and drain voltage ranges from 0 V to 1.5 V. The contact resistance of drain and source is also varied to observe device ON/OFF performances. The electrostatic behaviour of the device is also analysed via observation of electric field and potential variations at different bias conditions. Adding a p+ pocket in the NCDGMOSFET structure further enhances the performance by modifying the channel properties with subthreshold slope and DIBL vales of 76 mV decade−1 and 36 mV/V respectively. This modification also leads to improved barrier to subthreshold conduction during the Ioff state of the transistor, while minimally impacting the Ion state. The proposed device design and performance analysis are conducted through TCAD 2D/3D device simulation software by Cogenda.
Kurinec S.K., Schroeder U., Subramanyam G., Olsson III R.H.
2025-01-01
Rahmani I., Dibi Z., Farhati H., Djeffal F.
2024-12-09 Abstract  
We present a new subthreshold analytical model for dual-material junctionless gate-all-around negative capacitance field-effect transistors (DM JL GAA NCFETs). The model accurately reproduces the electrostatic potential distribution, subthreshold current characteristics of the device, threshold voltage, and subthreshold slope. By solving the Landau–Khalatnikov (L–K) equation with Poisson’s equation, the model provides a precise analytical solution that aligns closely with numerical results. The impact of various parameters such as channel length, DM gate ratio, and ferroelectric layer thickness on the device subthreshold behavior is systematically analyzed. It is found that the strategic combination between the JL structure and NC effect can allow achieving enhanced device performance at the nanoscale level. The results demonstrate that the optimized DM JL GAA NCFET exhibits enhanced short-channel performance at nanoscale level, reduced subthreshold swing of 49 mV/dec, lower threshold voltage of 0.20 V, and reduced OFF-current of 1.5 × 10–5 nA. Therefore, the proposed design framework strategy paves the way for designers not only to identify the appropriate DM gate configuration and the suitable ferroelectric material for the development of ultralow-power and high-performance nanoelectronic circuits.
Morozovska A.N., Eliseev E.A., Vysochanskii Y.M., Kalinin S.V., Strikha M.V.
Advanced Electronic Materials scimago Q1 wos Q1 Open Access  
2024-10-22 PDF Abstract  
AbstractAnalytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D‐semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy‐degenerated poly‐domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET‐type heterostructure “ferrielectric CuInP2S6 film—2D‐MoS2 single‐layer—SiO2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep‐slope ferrielectric FETs.

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