Journal of Materials Chemistry C, volume 9, issue 35, pages 11407-11427

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Ruo‐Si Chen ^{1, 2}

Ruo-Si Chen ^{1, 2}

Guanglong Ding ³

Ye Zhou ³

Su-Ting Han ²

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College of Electronics and Information Engineering, Shenzhen 518060, P. R. China |

Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China |

Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China |

Publication type: Journal Article

Publication date: 2021-06-02

Royal Society of Chemistry (RSC)

Journal: Journal of Materials Chemistry C

scimago Q1

SJR: 1.358

CiteScore: 10.8

Impact factor: 5.7

ISSN: 20507526, 20507534

DOI: 10.1039/d1tc01463c

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Materials Chemistry

General Chemistry

Abstract

In this review, we summarize the recent progress on how to circumvent FLP between 2D TMD semiconductors and metals.

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CITATIONS

83 Total citations

62 Recent citations

9.68 Field Citation Ratio

n/a Relative Citation Ratio

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Chen R. et al. Fermi-level depinning of 2D transition metal dichalcogenide transistors // Journal of Materials Chemistry C. 2021. Vol. 9. No. 35. pp. 11407-11427.

GOST all authors (up to 50) Copy

Chen R., Chen R., Ding G., Zhou Y., Han S. Fermi-level depinning of 2D transition metal dichalcogenide transistors // Journal of Materials Chemistry C. 2021. Vol. 9. No. 35. pp. 11407-11427.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1039/d1tc01463c

UR - https://doi.org/10.1039/d1tc01463c

TI - Fermi-level depinning of 2D transition metal dichalcogenide transistors

T2 - Journal of Materials Chemistry C

AU - Chen, Ruo‐Si

AU - Chen, Ruo-Si

AU - Ding, Guanglong

AU - Zhou, Ye

AU - Han, Su-Ting

PY - 2021

DA - 2021/06/02

PB - Royal Society of Chemistry (RSC)

SP - 11407-11427

IS - 35

VL - 9

SN - 2050-7526

SN - 2050-7534

ER -

BibTex |

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@article{2021_Chen,

author = {Ruo‐Si Chen and Ruo-Si Chen and Guanglong Ding and Ye Zhou and Su-Ting Han},

title = {Fermi-level depinning of 2D transition metal dichalcogenide transistors},

journal = {Journal of Materials Chemistry C},

year = {2021},

volume = {9},

publisher = {Royal Society of Chemistry (RSC)},

month = {jun},

url = {https://doi.org/10.1039/d1tc01463c},

number = {35},

pages = {11407--11427},

doi = {10.1039/d1tc01463c}

}

MLA

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MLA Copy

Chen, Ruo‐Si, et al. “Fermi-level depinning of 2D transition metal dichalcogenide transistors.” Journal of Materials Chemistry C, vol. 9, no. 35, Jun. 2021, pp. 11407-11427. https://doi.org/10.1039/d1tc01463c.

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Publisher

Royal Society of Chemistry (RSC)

Journal

Journal of Materials Chemistry C

scimago Q1

SJR

1.358

CiteScore

10.8

Impact factor

5.7

ISSN

20507526 (Print)

20507534 (Electronic)