Journal of Materials Chemistry A

Beryllium dinitride monolayer: a multifunctional direct bandgap anisotropic semiconductor containing polymeric nitrogen with oxygen reduction catalysis and potassium-ion storage capability

Shuang Ni ¹

Jiaxin Jiang ²

Weiyi Wang ³

X. W. Wu ³

Zhiwen Zhuo ³

Zhuo Wang ¹

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Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, People's Republic of China |

Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials, Key Laboratory of Functional Molecular Solids Ministry of Education, Department of Physics, Anhui Normal University, Wuhu, Anhui 241000, China |

Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, 96 Jinzhai Rd., Hefei 230026, People's Republic of China |

Publication type: Journal Article

Publication date: 2025-02-25

Royal Society of Chemistry (RSC)

Journal: Journal of Materials Chemistry A

scimago Q1

SJR: 2.804

CiteScore: 19.5

Impact factor: 10.7

ISSN: 20507488, 20507496, 09599428, 13645501

DOI: 10.1039/d4ta08565e

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Abstract

The novel α-2D-BeN₂ monolayer shows exceptional potential as a multifunctional semiconductor for ORR/OER catalysis as well as for potassium-ion batteries.

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Publisher

Royal Society of Chemistry (RSC)

Journal

Journal of Materials Chemistry A

scimago Q1

SJR

2.804

CiteScore

19.5

Impact factor

10.7

ISSN

20507488 (Print)

20507496 (Electronic)

09599428 (Print)

13645501 (Electronic)