Dalton Transactions, volume 48, issue 7, pages 2422-2429

Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers

Publication typeJournal Article
Publication date2019-01-16
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor4
ISSN14779226, 14779234
Inorganic Chemistry
Abstract

A hydrothermal synthesis of molybdenum disulphide (MoS2) monolayer QDs and their application to flexible memristive devices have been demonstrated.

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GOST |
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GOST Copy
Veeramalai C. P. et al. Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers // Dalton Transactions. 2019. Vol. 48. No. 7. pp. 2422-2429.
GOST all authors (up to 50) Copy
Veeramalai C. P., Li F., Guo T., Kim T. W. Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers // Dalton Transactions. 2019. Vol. 48. No. 7. pp. 2422-2429.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1039/c8dt04593c
UR - https://doi.org/10.1039/c8dt04593c
TI - Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers
T2 - Dalton Transactions
AU - Veeramalai, Chandrasekar Perumal
AU - Li, Fushan
AU - Guo, Tailiang
AU - Kim, Tae Whan
PY - 2019
DA - 2019/01/16 00:00:00
PB - Royal Society of Chemistry (RSC)
SP - 2422-2429
IS - 7
VL - 48
SN - 1477-9226
SN - 1477-9234
ER -
BibTex |
Cite this
BibTex Copy
@article{2019_Veeramalai,
author = {Chandrasekar Perumal Veeramalai and Fushan Li and Tailiang Guo and Tae Whan Kim},
title = {Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers},
journal = {Dalton Transactions},
year = {2019},
volume = {48},
publisher = {Royal Society of Chemistry (RSC)},
month = {jan},
url = {https://doi.org/10.1039/c8dt04593c},
number = {7},
pages = {2422--2429},
doi = {10.1039/c8dt04593c}
}
MLA
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MLA Copy
Veeramalai, Chandrasekar Perumal, et al. “Highly flexible memristive devices based on MoS2 quantum dots sandwiched between PMSSQ layers.” Dalton Transactions, vol. 48, no. 7, Jan. 2019, pp. 2422-2429. https://doi.org/10.1039/c8dt04593c.
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