Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon
Olga Yu Koval
1, 2, 3, 4
,
Vladimir V Fedorov
1, 2, 3, 4
,
Yury V Fedorov
1
,
Natalia Kryzhanovskaya
1, 2, 3, 4
,
Georgiy A Sapunov
1, 2, 3, 4
,
D.A. Kirilenko
5, 6
,
Demid A Kirilenko
3, 4, 7, 8
,
Evgeniy V Pirogov
1, 2, 3, 4
,
Nikolay G Filosofov
4, 9, 10, 11
,
Aleksei Yu Serov
4, 9, 10, 11
,
I V Shtrom
1, 9
,
Igor V Shtrom
2, 3, 4, 10, 11
,
Alexey P. Bolshakov
1, 2, 3, 4
,
Ivan S. Mukhin
1, 5
3
St. Petersburg
4
Russia
|
11
St Petersburg 199034
Publication type: Journal Article
Publication date: 2020-01-01
scimago Q2
wos Q2
SJR: 0.520
CiteScore: 5.2
Impact factor: 2.6
ISSN: 14668033
General Chemistry
Condensed Matter Physics
General Materials Science
Abstract
III–V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III–P–N) are among the promising materials providing lattice matching with Si. In this work, we study the effect of growth conditions on the chemical composition and properties of GaP1−xNx/GaP/Si planar heterostructures synthesized by plasma assisted molecular beam epitaxy. A series of samples with a maximum fraction of incorporated nitrogen as high as 5.05% is synthesized. The morphological, structural and optical properties of the heterostructures are studied. The tendency towards 3D growth and microtwinning in dilute nitride layers are demonstrated with the increase of nitrogen content. The most intense room temperature (RT) red photoluminescence (PL) emission is obtained with the sample containing 3.07% N. The PL intensity is found to be dependent on the N growth flux while its content only slightly changes with the flux. A low temperature PL study demonstrates efficient donor–acceptor recombination in the synthesized samples. Despite low structural perfection, the sample with the highest nitrogen content demonstrates PL response at RT centered at 1.76 eV.
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Koval O. Yu. et al. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon // CrystEngComm. 2020. Vol. 22. No. 2. pp. 283-292.
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Koval O. Yu., Fedorov V. V., Fedorov Y. V., Kryzhanovskaya N., Sapunov G. A., Kirilenko D., Kirilenko D. A., Pirogov E. V., Filosofov N. G., Serov A. Yu., Shtrom I. V., Shtrom I. V., Bolshakov A. P., Mukhin I. S. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon // CrystEngComm. 2020. Vol. 22. No. 2. pp. 283-292.
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TY - JOUR
DO - 10.1039/c9ce01498e
UR - https://xlink.rsc.org/?DOI=C9CE01498E
TI - Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon
T2 - CrystEngComm
AU - Koval, Olga Yu
AU - Fedorov, Vladimir V
AU - Fedorov, Yury V
AU - Kryzhanovskaya, Natalia
AU - Sapunov, Georgiy A
AU - Kirilenko, D.A.
AU - Kirilenko, Demid A
AU - Pirogov, Evgeniy V
AU - Filosofov, Nikolay G
AU - Serov, Aleksei Yu
AU - Shtrom, I V
AU - Shtrom, Igor V
AU - Bolshakov, Alexey P.
AU - Mukhin, Ivan S.
PY - 2020
DA - 2020/01/01
PB - Royal Society of Chemistry (RSC)
SP - 283-292
IS - 2
VL - 22
SN - 1466-8033
ER -
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BibTex (up to 50 authors)
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@article{2020_Koval,
author = {Olga Yu Koval and Vladimir V Fedorov and Yury V Fedorov and Natalia Kryzhanovskaya and Georgiy A Sapunov and D.A. Kirilenko and Demid A Kirilenko and Evgeniy V Pirogov and Nikolay G Filosofov and Aleksei Yu Serov and I V Shtrom and Igor V Shtrom and Alexey P. Bolshakov and Ivan S. Mukhin},
title = {Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon},
journal = {CrystEngComm},
year = {2020},
volume = {22},
publisher = {Royal Society of Chemistry (RSC)},
month = {jan},
url = {https://xlink.rsc.org/?DOI=C9CE01498E},
number = {2},
pages = {283--292},
doi = {10.1039/c9ce01498e}
}
Cite this
MLA
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Koval, Olga Yu., et al. “Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon.” CrystEngComm, vol. 22, no. 2, Jan. 2020, pp. 283-292. https://xlink.rsc.org/?DOI=C9CE01498E.