New Journal of Chemistry, volume 44, issue 28, pages 11941-11948
Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors
Publication type: Journal Article
Publication date: 2020-06-03
Journal:
New Journal of Chemistry
Q2
Q2
SJR: 0.521
CiteScore: 5.3
Impact factor: 2.7
ISSN: 11440546, 13699261
Materials Chemistry
General Chemistry
Catalysis
Abstract
This report demonstrates the fabrication of a flexible, water-soluble MoS2 QDs/PVA (polyvinyl alcohol) film sandwiched between Cu electrodes as a resistive memory.
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GOST
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Koduvayur Ganeshan S., Selamneni V., Sahatiya P. Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors // New Journal of Chemistry. 2020. Vol. 44. No. 28. pp. 11941-11948.
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Koduvayur Ganeshan S., Selamneni V., Sahatiya P. Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors // New Journal of Chemistry. 2020. Vol. 44. No. 28. pp. 11941-11948.
Cite this
RIS
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TY - JOUR
DO - 10.1039/d0nj02053b
UR - https://doi.org/10.1039/d0nj02053b
TI - Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors
T2 - New Journal of Chemistry
AU - Koduvayur Ganeshan, Sankalp
AU - Selamneni, Venkatarao
AU - Sahatiya, Parikshit
PY - 2020
DA - 2020/06/03
PB - Royal Society of Chemistry (RSC)
SP - 11941-11948
IS - 28
VL - 44
SN - 1144-0546
SN - 1369-9261
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2020_Koduvayur Ganeshan,
author = {Sankalp Koduvayur Ganeshan and Venkatarao Selamneni and Parikshit Sahatiya},
title = {Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors},
journal = {New Journal of Chemistry},
year = {2020},
volume = {44},
publisher = {Royal Society of Chemistry (RSC)},
month = {jun},
url = {https://doi.org/10.1039/d0nj02053b},
number = {28},
pages = {11941--11948},
doi = {10.1039/d0nj02053b}
}
Cite this
MLA
Copy
Koduvayur Ganeshan, Sankalp, et al. “Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors.” New Journal of Chemistry, vol. 44, no. 28, Jun. 2020, pp. 11941-11948. https://doi.org/10.1039/d0nj02053b.