Journal of Materials Chemistry C, volume 11, issue 33, pages 11392-11398

AgBiS2 quantum dot based multilevel resistive switching for low power electronics

Harshit Sharma 1, 2
Nitish Saini 1, 2
A. Kumar 1, 2
Archana Singh 1, 2
1
 
Academy of Scientific and innovative Research (AcSIR), Ghaziabad 201002, India
2
 
CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi 110012, India
Publication typeJournal Article
Publication date2023-07-25
Q1
Q1
SJR1.358
CiteScore10.8
Impact factor5.7
ISSN20507526, 20507534
Materials Chemistry
General Chemistry
Abstract

In the ever-expanding digital landscape, efficient solutions are needed that offer mass-producible, high-density, and low-power data storage capabilities to fulfill the growing demand. Memristive devices incorporating solution-processable metal chalcogenide quantum...

Top-30

Journals

1
Journal of Chemical Physics
1 publication, 20%
Russian Chemical Reviews
1 publication, 20%
RSC Advances
1 publication, 20%
Applied Physics Letters
1 publication, 20%
Journal of Alloys and Compounds
1 publication, 20%
1

Publishers

1
2
AIP Publishing
2 publications, 40%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 20%
Royal Society of Chemistry (RSC)
1 publication, 20%
Elsevier
1 publication, 20%
1
2
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
Share
Cite this
GOST |
Cite this
GOST Copy
Sharma H. et al. AgBiS2 quantum dot based multilevel resistive switching for low power electronics // Journal of Materials Chemistry C. 2023. Vol. 11. No. 33. pp. 11392-11398.
GOST all authors (up to 50) Copy
Sharma H., Saini N., Kumar A., Singh A. AgBiS2 quantum dot based multilevel resistive switching for low power electronics // Journal of Materials Chemistry C. 2023. Vol. 11. No. 33. pp. 11392-11398.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1039/d3tc01050c
UR - https://doi.org/10.1039/d3tc01050c
TI - AgBiS2 quantum dot based multilevel resistive switching for low power electronics
T2 - Journal of Materials Chemistry C
AU - Sharma, Harshit
AU - Saini, Nitish
AU - Kumar, A.
AU - Singh, Archana
PY - 2023
DA - 2023/07/25
PB - Royal Society of Chemistry (RSC)
SP - 11392-11398
IS - 33
VL - 11
SN - 2050-7526
SN - 2050-7534
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2023_Sharma,
author = {Harshit Sharma and Nitish Saini and A. Kumar and Archana Singh},
title = {AgBiS2 quantum dot based multilevel resistive switching for low power electronics},
journal = {Journal of Materials Chemistry C},
year = {2023},
volume = {11},
publisher = {Royal Society of Chemistry (RSC)},
month = {jul},
url = {https://doi.org/10.1039/d3tc01050c},
number = {33},
pages = {11392--11398},
doi = {10.1039/d3tc01050c}
}
MLA
Cite this
MLA Copy
Sharma, Harshit, et al. “AgBiS2 quantum dot based multilevel resistive switching for low power electronics.” Journal of Materials Chemistry C, vol. 11, no. 33, Jul. 2023, pp. 11392-11398. https://doi.org/10.1039/d3tc01050c.
Found error?