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Electronics Letters, volume 33, issue 13, pages 1150

Vertical cavity lasers based on vertically coupled quantum dots

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Dept. of Electr. & Comput. Eng., Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
Publication typeJournal Article
Publication date2002-07-26
scimago Q3
wos Q4
SJR0.323
CiteScore2.7
Impact factor0.7
ISSN00135194, 1350911X
Electrical and Electronic Engineering
Abstract
Ground state lasing is reported for vertical cavity lasers containing three-period InGaAs/GaAs vertically coupled quantum dot active regions. The structures include selectively oxidised AlO current apertures and AlO/GaAs reflectors. Experimental devices emitting near 1.0 µm operate continuous wave at 20°C with threshold currents <200 µA and peak power conversion efficiencies exceeding 10%.
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