Open Access
Electronics Letters, volume 33, issue 13, pages 1150
Vertical cavity lasers based on vertically coupled quantum dots
J.A. LOTT
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1
Dept. of Electr. & Comput. Eng., Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
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Publication type: Journal Article
Publication date: 2002-07-26
Journal:
Electronics Letters
scimago Q3
wos Q4
SJR: 0.323
CiteScore: 2.7
Impact factor: 0.7
ISSN: 00135194, 1350911X
Electrical and Electronic Engineering
Abstract
Ground state lasing is reported for vertical cavity lasers containing three-period InGaAs/GaAs vertically coupled quantum dot active regions. The structures include selectively oxidised AlO current apertures and AlO/GaAs reflectors. Experimental devices emitting near 1.0 µm operate continuous wave at 20°C with threshold currents <200 µA and peak power conversion efficiencies exceeding 10%.
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