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Electronics Letters, volume 35, issue 11, pages 898

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Yu.M. Shernyakov ¹

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A.F. Ioffe Phys.-Tech. Inst., St. Petersburg, Russia |

Publication type: Journal Article

Publication date: 2002-07-26

Institution of Engineering and Technology (IET)

Journal: Electronics Letters

scimago Q3

wos Q4

SJR: 0.323

CiteScore: 2.7

Impact factor: 0.7

ISSN: 00135194, 1350911X

DOI: 10.1049/el:19990596

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Electrical and Electronic Engineering

Abstract

Low threshold current density (J/sub th/=65 A/cm/sup 2/) operation near 1.3 /spl mu/m at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.

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Shernyakov Y. et al. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition // Electronics Letters. 2002. Vol. 35. No. 11. p. 898.

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Shernyakov Y. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition // Electronics Letters. 2002. Vol. 35. No. 11. p. 898.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1049/el:19990596

UR - https://doi.org/10.1049/el:19990596

TI - 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

T2 - Electronics Letters

AU - Shernyakov, Yu.M.

PY - 2002

DA - 2002/07/26

PB - Institution of Engineering and Technology (IET)

SP - 898

IS - 11

VL - 35

SN - 0013-5194

SN - 1350-911X

ER -

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@article{2002_Shernyakov,

author = {Yu.M. Shernyakov},

title = {1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition},

journal = {Electronics Letters},

year = {2002},

volume = {35},

publisher = {Institution of Engineering and Technology (IET)},

month = {jul},

url = {https://doi.org/10.1049/el:19990596},

number = {11},

pages = {898},

doi = {10.1049/el:19990596}

}

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Shernyakov, Yu.M., et al. “1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition.” Electronics Letters, vol. 35, no. 11, Jul. 2002, p. 898. https://doi.org/10.1049/el:19990596.

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Publisher

Institution of Engineering and Technology (IET)

Journal

Electronics Letters

scimago Q3

wos Q4

SJR

0.323

CiteScore

2.7

Impact factor

0.7

ISSN

00135194 (Print)

1350911X (Electronic)

Profiles

Maximov, M V