Open Access
Open access
Electronics Letters, volume 37, issue 3, pages 174

Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

1
 
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Publication typeJournal Article
Publication date2002-07-26
scimago Q3
wos Q4
SJR0.323
CiteScore2.7
Impact factor0.7
ISSN00135194, 1350911X
Electrical and Electronic Engineering
Abstract
The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant.

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