Applied Physics Letters, volume 70, issue 20, pages 2753-2755

Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

Shuji Nakamura ¹

Masayuki Senoh ¹

Shin Ichi Nagahama ¹

Naruhito Iwasa ¹

Takao Yamada ¹

Toshio Matsushita ¹

Yasunobu Sugimoto ¹

Hiroyuki Kiyoku ¹

Show full list: 8 authors

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Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774, Japan |

Publication type: Journal Article

Publication date: 1997-05-19

AIP Publishing

Journal: Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.976

CiteScore: 6.4

Impact factor: 3.5

ISSN: 00036951, 10773118

DOI: 10.1063/1.118973

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Physics and Astronomy (miscellaneous)

Abstract

The emission spectra of InGaN multi-quantum-well (MQW) laser diodes (LDs) under continuous-wave (CW) operation at room temperature (RT) showed periodic subband emissions with an energy separation of 2 meV. The peak wavelength of the laser emission was measured as a function of the operating current. The peak wavelength showed mode hopping toward higher energy with increasing operating current. Each single-mode laser emission was located at a peak of each periodic subband emission. These periodic subband emissions probably result from the transitions between the subband energy levels of the InGaN quantum dots formed from In-rich regions in the InGaN well layers. High-power InGaN MQW LDs with an output power of 40 mW were performed under RT CW operation.

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Nakamura S. et al. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation // Applied Physics Letters. 1997. Vol. 70. No. 20. pp. 2753-2755.

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Nakamura S., Senoh M., Nagahama S. I., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation // Applied Physics Letters. 1997. Vol. 70. No. 20. pp. 2753-2755.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.118973

UR - https://doi.org/10.1063/1.118973

TI - Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

T2 - Applied Physics Letters

AU - Nakamura, Shuji

AU - Senoh, Masayuki

AU - Nagahama, Shin Ichi

AU - Iwasa, Naruhito

AU - Yamada, Takao

AU - Matsushita, Toshio

AU - Sugimoto, Yasunobu

AU - Kiyoku, Hiroyuki

PY - 1997

DA - 1997/05/19

PB - AIP Publishing

SP - 2753-2755

IS - 20

VL - 70

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

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@article{1997_Nakamura,

author = {Shuji Nakamura and Masayuki Senoh and Shin Ichi Nagahama and Naruhito Iwasa and Takao Yamada and Toshio Matsushita and Yasunobu Sugimoto and Hiroyuki Kiyoku},

title = {Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation},

journal = {Applied Physics Letters},

year = {1997},

volume = {70},

publisher = {AIP Publishing},

month = {may},

url = {https://doi.org/10.1063/1.118973},

number = {20},

pages = {2753--2755},

doi = {10.1063/1.118973}

}

MLA

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MLA Copy

Nakamura, Shuji, et al. “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation.” Applied Physics Letters, vol. 70, no. 20, May. 1997, pp. 2753-2755. https://doi.org/10.1063/1.118973.

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Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.976

CiteScore

6.4

Impact factor

3.5

ISSN

00036951 (Print)

10773118 (Electronic)