Applied Physics Letters

, volume 70 , issue 20 , pages 2753-2755

Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

Shuji Nakamura ¹

Masayuki Senoh ¹

Shin Ichi Nagahama ¹

Naruhito Iwasa ¹

Takao Yamada ¹

Toshio Matsushita ¹

Yasunobu Sugimoto ¹

Hiroyuki Kiyoku ¹

Hide authors affiliations Show authors affiliations: 1 affiliation

Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774, Japan |

Publication type: Journal Article

Publication date: 1997-05-19

AIP Publishing

Applied Physics Letters

scimago Q1

wos Q2

SJR: 0.896

CiteScore: 6.1

Impact factor: 3.6

ISSN: 00036951, 10773118

DOI: 10.1063/1.118973

Copy DOI

Physics and Astronomy (miscellaneous)

Abstract

The emission spectra of InGaN multi-quantum-well (MQW) laser diodes (LDs) under continuous-wave (CW) operation at room temperature (RT) showed periodic subband emissions with an energy separation of 2 meV. The peak wavelength of the laser emission was measured as a function of the operating current. The peak wavelength showed mode hopping toward higher energy with increasing operating current. Each single-mode laser emission was located at a peak of each periodic subband emission. These periodic subband emissions probably result from the transitions between the subband energy levels of the InGaN quantum dots formed from In-rich regions in the InGaN well layers. High-power InGaN MQW LDs with an output power of 40 mW were performed under RT CW operation.

Found

Top-30

Journals

	2 4 6 8 10 12 14 16
Applied Physics Letters	Applied Physics Letters, 15, 18.75% Applied Physics Letters 15 publications, 18.75%
MRS Proceedings	MRS Proceedings, 7, 8.75% MRS Proceedings 7 publications, 8.75%
Journal of Crystal Growth	Journal of Crystal Growth, 6, 7.5% Journal of Crystal Growth 6 publications, 7.5%
IEEE Journal of Selected Topics in Quantum Electronics	IEEE Journal of Selected Topics in Quantum Electronics, 5, 6.25% IEEE Journal of Selected Topics in Quantum Electronics 5 publications, 6.25%
Journal of Applied Physics	Journal of Applied Physics, 4, 5% Journal of Applied Physics 4 publications, 5%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 4, 5% Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 4 publications, 5%
Physical Review B	Physical Review B, 3, 3.75% Physical Review B 3 publications, 3.75%
phys stat sol (a)	phys stat sol (a), 3, 3.75% phys stat sol (a) 3 publications, 3.75%
Journal of Luminescence	Journal of Luminescence, 2, 2.5% Journal of Luminescence 2 publications, 2.5%
International Journal of High Speed Electronics and Systems	International Journal of High Speed Electronics and Systems, 2, 2.5% International Journal of High Speed Electronics and Systems 2 publications, 2.5%
MRS Internet Journal of Nitride Semiconductor Research	MRS Internet Journal of Nitride Semiconductor Research, 2, 2.5% MRS Internet Journal of Nitride Semiconductor Research 2 publications, 2.5%
Progress in Crystal Growth and Characterization of Materials	Progress in Crystal Growth and Characterization of Materials, 1, 1.25% Progress in Crystal Growth and Characterization of Materials 1 publication, 1.25%
Physical Review Letters	Physical Review Letters, 1, 1.25% Physical Review Letters 1 publication, 1.25%
Thin Solid Films	Thin Solid Films, 1, 1.25% Thin Solid Films 1 publication, 1.25%
Materials Letters	Materials Letters, 1, 1.25% Materials Letters 1 publication, 1.25%
Optics Communications	Optics Communications, 1, 1.25% Optics Communications 1 publication, 1.25%
Electronics Letters	Electronics Letters, 1, 1.25% Electronics Letters 1 publication, 1.25%
Optical Engineering	Optical Engineering, 1, 1.25% Optical Engineering 1 publication, 1.25%
Materials Transactions	Materials Transactions, 1, 1.25% Materials Transactions 1 publication, 1.25%
Journal of Materials Research	Journal of Materials Research, 1, 1.25% Journal of Materials Research 1 publication, 1.25%
Journal of Physics Condensed Matter	Journal of Physics Condensed Matter, 1, 1.25% Journal of Physics Condensed Matter 1 publication, 1.25%
Semiconductor Science and Technology	Semiconductor Science and Technology, 1, 1.25% Semiconductor Science and Technology 1 publication, 1.25%
Solid State Communications	Solid State Communications, 1, 1.25% Solid State Communications 1 publication, 1.25%
iScience	iScience, 1, 1.25% iScience 1 publication, 1.25%
Physica Status Solidi (B): Basic Research	Physica Status Solidi (B): Basic Research, 1, 1.25% Physica Status Solidi (B): Basic Research 1 publication, 1.25%
physica status solidi (c)	physica status solidi (c), 1, 1.25% physica status solidi (c) 1 publication, 1.25%
Advanced Optical Materials	Advanced Optical Materials, 1, 1.25% Advanced Optical Materials 1 publication, 1.25%
Technical Physics Letters	Technical Physics Letters, 1, 1.25% Technical Physics Letters 1 publication, 1.25%
IEEE Journal of Quantum Electronics	IEEE Journal of Quantum Electronics, 1, 1.25% IEEE Journal of Quantum Electronics 1 publication, 1.25%
	2 4 6 8 10 12 14 16

Publishers

	2 4 6 8 10 12 14 16 18 20
AIP Publishing	AIP Publishing, 19, 23.75% AIP Publishing 19 publications, 23.75%
Elsevier	Elsevier, 14, 17.5% Elsevier 14 publications, 17.5%
	, 9, 11.25% 9 publications, 11.25%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 7, 8.75% Institute of Electrical and Electronics Engineers (IEEE) 7 publications, 8.75%
Wiley	Wiley, 6, 7.5% Wiley 6 publications, 7.5%
American Physical Society (APS)	American Physical Society (APS), 4, 5% American Physical Society (APS) 4 publications, 5%
Japan Society of Applied Physics	Japan Society of Applied Physics, 4, 5% Japan Society of Applied Physics 4 publications, 5%
World Scientific	World Scientific, 2, 2.5% World Scientific 2 publications, 2.5%
IOP Publishing	IOP Publishing, 2, 2.5% IOP Publishing 2 publications, 2.5%
Pleiades Publishing	Pleiades Publishing, 2, 2.5% Pleiades Publishing 2 publications, 2.5%
Institution of Engineering and Technology (IET)	Institution of Engineering and Technology (IET), 1, 1.25% Institution of Engineering and Technology (IET) 1 publication, 1.25%
SPIE-Intl Soc Optical Eng	SPIE-Intl Soc Optical Eng, 1, 1.25% SPIE-Intl Soc Optical Eng 1 publication, 1.25%
Japan Institute of Metals	Japan Institute of Metals, 1, 1.25% Japan Institute of Metals 1 publication, 1.25%
Cambridge University Press	Cambridge University Press, 1, 1.25% Cambridge University Press 1 publication, 1.25%
Optica Publishing Group	Optica Publishing Group, 1, 1.25% Optica Publishing Group 1 publication, 1.25%
Annual Reviews	Annual Reviews, 1, 1.25% Annual Reviews 1 publication, 1.25%
Springer Nature	Springer Nature, 1, 1.25% Springer Nature 1 publication, 1.25%
	2 4 6 8 10 12 14 16 18 20

We do not take into account publications without a DOI.
Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.

Metrics

Cite this

GOST |

Cite this

GOST Copy

Nakamura S. et al. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation // Applied Physics Letters. 1997. Vol. 70. No. 20. pp. 2753-2755.

GOST all authors (up to 50) Copy

Nakamura S., Senoh M., Nagahama S. I., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation // Applied Physics Letters. 1997. Vol. 70. No. 20. pp. 2753-2755.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1063/1.118973

UR - https://doi.org/10.1063/1.118973

TI - Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

T2 - Applied Physics Letters

AU - Nakamura, Shuji

AU - Senoh, Masayuki

AU - Nagahama, Shin Ichi

AU - Iwasa, Naruhito

AU - Yamada, Takao

AU - Matsushita, Toshio

AU - Sugimoto, Yasunobu

AU - Kiyoku, Hiroyuki

PY - 1997

DA - 1997/05/19

PB - AIP Publishing

SP - 2753-2755

IS - 20

VL - 70

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{1997_Nakamura,

author = {Shuji Nakamura and Masayuki Senoh and Shin Ichi Nagahama and Naruhito Iwasa and Takao Yamada and Toshio Matsushita and Yasunobu Sugimoto and Hiroyuki Kiyoku},

title = {Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation},

journal = {Applied Physics Letters},

year = {1997},

volume = {70},

publisher = {AIP Publishing},

month = {may},

url = {https://doi.org/10.1063/1.118973},

number = {20},

pages = {2753--2755},

doi = {10.1063/1.118973}

}

MLA

Cite this

MLA Copy

Nakamura, Shuji, et al. “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation.” Applied Physics Letters, vol. 70, no. 20, May. 1997, pp. 2753-2755. https://doi.org/10.1063/1.118973.

Publisher

AIP Publishing

Journal

Applied Physics Letters

scimago Q1

wos Q2

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)