Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
N. N. LEDENTSOV
1
,
D. BIMBERG
1
,
Yu.M. Shernyakov
2
,
V Kochnev
2
,
M. V. MAXIMOV
2
,
A.V. Sakharov
2
,
I.L. Krestnikov
2
,
A. Yu, EGOROV
2
,
A. E. ZHUKOV
2
,
A. F. TSATSUL'NIKOV
2
,
B.V. Volovik
2
,
V. M. Ustinov
2
,
P. S. KOP'EV
2
,
Zh. I. Alferov
2
,
A. O. Kosogov
3
,
P. Werner
3
Publication type: Journal Article
Publication date: 1997-05-26
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
DOI:
10.1063/1.119032
Physics and Astronomy (miscellaneous)
Abstract
Transmission electron microscopy studies of low indium composition InxGa1−xAs insertions (x<0.4) in a GaAs matrix deposited by molecular beam epitaxy or by metal-organic chemical vapor deposition reveal nanoscale quasiperiodic compositional and morphological modulations. The luminescence peak wavelength is found to be a strong function of deposition parameters and can be tuned from 1.1 to 1.3 μm for the same x and average thickness of the deposit. Strained (In, Ga, Al)As lasers with such a laterally modulated InxGa1−xAs active region demonstrate significant depolarization of the electroluminescence. For short cavity length, lasing occurs at energies corresponding to transitions between InxGa1−xAs conduction band and light holelike valence band states. Devices lase at low threshold current densities and demonstrate continuous wave operation up to 3 W at room temperature.
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LEDENTSOV N. N. et al. Properties of strained (In, Ga, Al)As lasers with laterally modulated active region // Applied Physics Letters. 1997. Vol. 70. No. 21. pp. 2888-2890.
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LEDENTSOV N. N., BIMBERG D., Shernyakov Y., Kochnev V., MAXIMOV M. V., Sakharov A., Krestnikov I., EGOROV A. Y., ZHUKOV A. E., TSATSUL'NIKOV A. F., Volovik B., Ustinov V. M., KOP'EV P. S., Alferov Z. I., Kosogov A. O., Werner P. Properties of strained (In, Ga, Al)As lasers with laterally modulated active region // Applied Physics Letters. 1997. Vol. 70. No. 21. pp. 2888-2890.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1063/1.119032
UR - https://doi.org/10.1063/1.119032
TI - Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
T2 - Applied Physics Letters
AU - LEDENTSOV, N. N.
AU - BIMBERG, D.
AU - Shernyakov, Yu.M.
AU - Kochnev, V
AU - MAXIMOV, M. V.
AU - Sakharov, A.V.
AU - Krestnikov, I.L.
AU - EGOROV, A. Yu,
AU - ZHUKOV, A. E.
AU - TSATSUL'NIKOV, A. F.
AU - Volovik, B.V.
AU - Ustinov, V. M.
AU - KOP'EV, P. S.
AU - Alferov, Zh. I.
AU - Kosogov, A. O.
AU - Werner, P.
PY - 1997
DA - 1997/05/26
PB - AIP Publishing
SP - 2888-2890
IS - 21
VL - 70
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{1997_LEDENTSOV,
author = {N. N. LEDENTSOV and D. BIMBERG and Yu.M. Shernyakov and V Kochnev and M. V. MAXIMOV and A.V. Sakharov and I.L. Krestnikov and A. Yu, EGOROV and A. E. ZHUKOV and A. F. TSATSUL'NIKOV and B.V. Volovik and V. M. Ustinov and P. S. KOP'EV and Zh. I. Alferov and A. O. Kosogov and P. Werner},
title = {Properties of strained (In, Ga, Al)As lasers with laterally modulated active region},
journal = {Applied Physics Letters},
year = {1997},
volume = {70},
publisher = {AIP Publishing},
month = {may},
url = {https://doi.org/10.1063/1.119032},
number = {21},
pages = {2888--2890},
doi = {10.1063/1.119032}
}
Cite this
MLA
Copy
LEDENTSOV, N. N., et al. “Properties of strained (In, Ga, Al)As lasers with laterally modulated active region.” Applied Physics Letters, vol. 70, no. 21, May. 1997, pp. 2888-2890. https://doi.org/10.1063/1.119032.
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