Journal of Applied Physics, volume 38, issue 7, pages 2761-2765
Decorated Dislocations in LiNbO3 and LiTaO3
H. J. Levinstein
1
,
C. D. Capio
1
1
BELL TELEPHONE LABORATORIES, MURRAY HILL, NEW JERSEY
|
Publication type: Journal Article
Publication date: 1967-06-01
Journal:
Journal of Applied Physics
scimago Q2
SJR: 0.649
CiteScore: 5.4
Impact factor: 2.7
ISSN: 00218979, 10897550
General Physics and Astronomy
Abstract
It has been found that dislocations in LiNbO3 and LiTaO3 single crystals can be decorated by electric-field-enhanced diffusion of platinum or gold into the crystals at temperatures in the order of 600°C with voltages in the range of 250 to 1000 V/cm. To demonstrate the use of the technique, examples of low-angle boundary networks in LiNbO3 and LiTaO3 are shown. The general characteristics of the as-grown dislocation network in a [101̄0]-growth-axis LiNbO3 crystal are described, and the effect of annealing on the dislocation array in LiTaO3 crystals is discussed.
Found
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.