Applied Physics Letters

, том 95 , издание 21 , страницы 213301

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Ariel J Ben Sasson ¹

Eran Avnon ¹

Elina Ploshnik ²

Oded Globerman ¹

Roy Shenhar ²

Gitti L Frey ³

Nir Tessler ¹

Скрыть аффилиации авторов Показать аффилиации авторов: 3 аффилиации

Technion—Israel Institute of Technology 1 Department of Electrical Engineering, Zisapel Nano-Electronic Center, , Haifa 32000, Israel |

The Hebrew University of Jerusalem 2 Institute of Chemistry and the Center for Nanoscience and Nanotechnology, , Safra Campus, Givat Ram, Jerusalem 91904, Israel |

Technion—Israel Institute of Technology 3 Department of Material Engineering, , Haifa 32000, Israel |

Тип публикации: Journal Article

Дата публикации: 2009-11-23

AIP Publishing

Applied Physics Letters

scimago Q1

wos Q2

БС1

SJR: 0.896

CiteScore: 6.1

Impact factor: 3.6

ISSN: 00036951, 10773118

DOI: 10.1063/1.3266855

Скопировать DOI

Physics and Astronomy (miscellaneous)

Краткое описание

We report the design and implementation of a vertical organic field effect transistor which is compatible with standard device fabrication technology and is well described by a self consistent device model. The active semiconductor is a film of C60 molecules, and the device operation is based on the architecture of the nanopatterned source electrode. The relatively high resolution fabrication process and maintaining the low-cost and simplicity associated with organic electronics, necessitates unconventional fabrication techniques such as soft lithography. Block copolymer self-assembled nanotemplates enable the production of conductive, gridlike metal electrode. The devices reported here exhibit On/Off ratio of 104.

Найдено

Топ-30

Журналы

	1 2 3 4 5 6 7 8
Organic Electronics	Organic Electronics, 8, 9.88% Organic Electronics 8 публикаций, 9.88%
Applied Physics Letters	Applied Physics Letters, 7, 8.64% Applied Physics Letters 7 публикаций, 8.64%
Journal of Applied Physics	Journal of Applied Physics, 5, 6.17% Journal of Applied Physics 5 публикаций, 6.17%
Advanced Functional Materials	Advanced Functional Materials, 4, 4.94% Advanced Functional Materials 4 публикации, 4.94%
ACS applied materials & interfaces	ACS applied materials & interfaces, 4, 4.94% ACS applied materials & interfaces 4 публикации, 4.94%
Nanotechnology	Nanotechnology, 3, 3.7% Nanotechnology 3 публикации, 3.7%
Small	Small, 3, 3.7% Small 3 публикации, 3.7%
Advanced Materials	Advanced Materials, 3, 3.7% Advanced Materials 3 публикации, 3.7%
Nano Letters	Nano Letters, 3, 3.7% Nano Letters 3 публикации, 3.7%
Applied Physics A: Materials Science and Processing	Applied Physics A: Materials Science and Processing, 2, 2.47% Applied Physics A: Materials Science and Processing 2 публикации, 2.47%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 2, 2.47% Journal of Materials Science: Materials in Electronics 2 публикации, 2.47%
Nature Communications	Nature Communications, 2, 2.47% Nature Communications 2 публикации, 2.47%
Engineering Research Express	Engineering Research Express, 2, 2.47% Engineering Research Express 2 публикации, 2.47%
Micromachines	Micromachines, 2, 2.47% Micromachines 2 публикации, 2.47%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 2, 2.47% Journal of Materials Chemistry C 2 публикации, 2.47%
Physical Review Applied	Physical Review Applied, 1, 1.23% Physical Review Applied 1 публикация, 1.23%
IET Circuits, Devices and Systems	IET Circuits, Devices and Systems, 1, 1.23% IET Circuits, Devices and Systems 1 публикация, 1.23%
Nature Electronics	Nature Electronics, 1, 1.23% Nature Electronics 1 публикация, 1.23%
Science China Information Sciences	Science China Information Sciences, 1, 1.23% Science China Information Sciences 1 публикация, 1.23%
Electronic Materials Letters	Electronic Materials Letters, 1, 1.23% Electronic Materials Letters 1 публикация, 1.23%
Semiconductor Science and Technology	Semiconductor Science and Technology, 1, 1.23% Semiconductor Science and Technology 1 публикация, 1.23%
Journal of Physics Condensed Matter	Journal of Physics Condensed Matter, 1, 1.23% Journal of Physics Condensed Matter 1 публикация, 1.23%
Applied Physics Express	Applied Physics Express, 1, 1.23% Applied Physics Express 1 публикация, 1.23%
Nature	Nature, 1, 1.23% Nature 1 публикация, 1.23%
Nano Today	Nano Today, 1, 1.23% Nano Today 1 публикация, 1.23%
Advanced Electronic Materials	Advanced Electronic Materials, 1, 1.23% Advanced Electronic Materials 1 публикация, 1.23%
Advanced Materials Interfaces	Advanced Materials Interfaces, 1, 1.23% Advanced Materials Interfaces 1 публикация, 1.23%
Advanced Materials Technologies	Advanced Materials Technologies, 1, 1.23% Advanced Materials Technologies 1 публикация, 1.23%
Israel Journal of Chemistry	Israel Journal of Chemistry, 1, 1.23% Israel Journal of Chemistry 1 публикация, 1.23%
	1 2 3 4 5 6 7 8

Издатели

	2 4 6 8 10 12 14 16
Wiley	Wiley, 15, 18.52% Wiley 15 публикаций, 18.52%
American Chemical Society (ACS)	American Chemical Society (ACS), 13, 16.05% American Chemical Society (ACS) 13 публикаций, 16.05%
AIP Publishing	AIP Publishing, 12, 14.81% AIP Publishing 12 публикаций, 14.81%
Elsevier	Elsevier, 11, 13.58% Elsevier 11 публикаций, 13.58%
Springer Nature	Springer Nature, 9, 11.11% Springer Nature 9 публикаций, 11.11%
IOP Publishing	IOP Publishing, 7, 8.64% IOP Publishing 7 публикаций, 8.64%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 4, 4.94% Royal Society of Chemistry (RSC) 4 публикации, 4.94%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 2, 2.47% Institute of Electrical and Electronics Engineers (IEEE) 2 публикации, 2.47%
MDPI	MDPI, 2, 2.47% MDPI 2 публикации, 2.47%
American Physical Society (APS)	American Physical Society (APS), 1, 1.23% American Physical Society (APS) 1 публикация, 1.23%
Institution of Engineering and Technology (IET)	Institution of Engineering and Technology (IET), 1, 1.23% Institution of Engineering and Technology (IET) 1 публикация, 1.23%
Science in China Press	Science in China Press, 1, 1.23% Science in China Press 1 публикация, 1.23%
Japan Society of Applied Physics	Japan Society of Applied Physics, 1, 1.23% Japan Society of Applied Physics 1 публикация, 1.23%
SPIE-Intl Soc Optical Eng	SPIE-Intl Soc Optical Eng, 1, 1.23% SPIE-Intl Soc Optical Eng 1 публикация, 1.23%
Taylor & Francis	Taylor & Francis, 1, 1.23% Taylor & Francis 1 публикация, 1.23%
	2 4 6 8 10 12 14 16

Мы не учитываем публикации, у которых нет DOI.
Статистика публикаций обновляется еженедельно.

Вы ученый?

Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.

Войти с ORCID

Метрики

Цитировать

ГОСТ |

Цитировать

ГОСТ Скопировать

Ben Sasson A. J. et al. Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates // Applied Physics Letters. 2009. Vol. 95. No. 21. p. 213301.

ГОСТ со всеми авторами (до 50) Скопировать

Ben Sasson A. J., Avnon E., Ploshnik E., Globerman O., Shenhar R., Frey G. L., Tessler N. Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates // Applied Physics Letters. 2009. Vol. 95. No. 21. p. 213301.

RIS |

Цитировать

RIS Скопировать

TY - JOUR

DO - 10.1063/1.3266855

UR - https://doi.org/10.1063/1.3266855

TI - Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

T2 - Applied Physics Letters

AU - Ben Sasson, Ariel J

AU - Avnon, Eran

AU - Ploshnik, Elina

AU - Globerman, Oded

AU - Shenhar, Roy

AU - Frey, Gitti L

AU - Tessler, Nir

PY - 2009

DA - 2009/11/23

PB - AIP Publishing

SP - 213301

IS - 21

VL - 95

SN - 0003-6951

SN - 1077-3118

ER -

BibTex |

Цитировать

BibTex (до 50 авторов) Скопировать

@article{2009_Ben Sasson,

author = {Ariel J Ben Sasson and Eran Avnon and Elina Ploshnik and Oded Globerman and Roy Shenhar and Gitti L Frey and Nir Tessler},

title = {Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates},

journal = {Applied Physics Letters},

year = {2009},

volume = {95},

publisher = {AIP Publishing},

month = {nov},

url = {https://doi.org/10.1063/1.3266855},

number = {21},

pages = {213301},

doi = {10.1063/1.3266855}

}

MLA

Цитировать

MLA Скопировать

Ben Sasson, Ariel J., et al. “Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates.” Applied Physics Letters, vol. 95, no. 21, Nov. 2009, p. 213301. https://doi.org/10.1063/1.3266855.

Издатель

AIP Publishing

Журнал

Applied Physics Letters

scimago Q1

wos Q2

БС1

SJR

0.896

CiteScore

6.1

Impact factor

3.6

ISSN

00036951 (Print)

10773118 (Electronic)