Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence
1
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
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Publication type: Journal Article
Publication date: 1991-10-01
scimago Q2
wos Q3
SJR: 0.580
CiteScore: 5.1
Impact factor: 2.5
ISSN: 00218979, 10897550
DOI:
10.1063/1.349210
General Physics and Astronomy
Abstract
We use in situ photoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAs surface reconstructions, after surface chemical modification, and during early stages of AlGaAs heteroepitaxy. Depositing ∼1 ML of Se to form a (2×1) surface increased the GaAs PL intensity 200 times. Surprisingly, it required 6 ML (15 Å) of heteroepitaxial AlGaAs to achieve the same degree of surface passivation. We invoke lateral variations in interfacial AlGaAs composition to explain these results.
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Sandroff C. J. et al. Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence // Journal of Applied Physics. 1991. Vol. 70. No. 7. pp. 3632-3635.
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Sandroff C. J., Turco Sandroff F. S., Florez L., Harbison J. Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence // Journal of Applied Physics. 1991. Vol. 70. No. 7. pp. 3632-3635.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.349210
UR - https://doi.org/10.1063/1.349210
TI - Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence
T2 - Journal of Applied Physics
AU - Sandroff, C. J.
AU - Turco Sandroff, F S
AU - Florez, L.T.
AU - Harbison, J.P.
PY - 1991
DA - 1991/10/01
PB - AIP Publishing
SP - 3632-3635
IS - 7
VL - 70
SN - 0021-8979
SN - 1089-7550
ER -
Cite this
BibTex (up to 50 authors)
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@article{1991_Sandroff,
author = {C. J. Sandroff and F S Turco Sandroff and L.T. Florez and J.P. Harbison},
title = {Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence},
journal = {Journal of Applied Physics},
year = {1991},
volume = {70},
publisher = {AIP Publishing},
month = {oct},
url = {https://doi.org/10.1063/1.349210},
number = {7},
pages = {3632--3635},
doi = {10.1063/1.349210}
}
Cite this
MLA
Copy
Sandroff, C. J., et al. “Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence.” Journal of Applied Physics, vol. 70, no. 7, Oct. 1991, pp. 3632-3635. https://doi.org/10.1063/1.349210.